MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PZTA64T1/D
PNP Small Signal
Darlington Transistor
This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
•High fT : 125 MHz Minimum
•The SOT-223 Package can be soldered using wave or reflow.
•SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
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Available in 12 mm Tape and Reel |
COLLECTOR 2, 4 |
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Use PZTA64T1 to order the 7 inch/1000 unit reel. |
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Use PZTA64T3 to order the 13 inch/4000 unit reel. |
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NPN Complement is PZTA14T1 |
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EMITTER 3
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
PZTA64T1
Motorola Preferred Device
SOT-223 PACKAGE
PNP SILICON
DARLINGTON
TRANSISTOR
SURFACE MOUNT
1 
2 
3
CASE 318E-04, STYLE 1
TO-261AA
Rating |
Symbol |
Value |
Unit |
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Collector-Emitter Voltage |
VCES |
30 |
Vdc |
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Collector-Base Voltage |
VCBO |
30 |
Vdc |
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Emitter-Base Voltage |
VEBO |
10 |
Vdc |
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Total Power Dissipation @ T = 25°C(1) |
P |
D |
1.5 |
Watts |
A |
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Collector Current |
IC |
500 |
mAdc |
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Operating and Storage Temperature Range |
TJ, Tstg |
± 65 to +150 |
°C |
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DEVICE MARKING |
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P2V |
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THERMAL CHARACTERISTICS |
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Thermal Resistance from Junction to Ambient (surface mounted) |
RθJA |
83.3 |
°C/W |
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Maximum Temperature for Soldering Purposes |
TL |
260 |
°C |
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Time in Solder Bath |
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10 |
Sec |
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1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola, Inc. 1996
PZTA64T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage |
V(BR)CES |
30 |
Ð |
Vdc |
(IC = 100 μAdc, VBE = 0) |
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Collector-Base Breakdown Voltage |
V(BR)CBO |
30 |
Ð |
Vdc |
(IC = 100 μA, IE = 0) |
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Emitter-Base Breakdown Voltage |
V(BR)EBO |
10 |
Ð |
Vdc |
(IE = 100 μA, IC = 0) |
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Emitter-Base Cutoff Current |
IEBO |
Ð |
0.1 |
μAdc |
(VBE = 10 Vdc, IC = 0) |
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Collector-Base Cutoff Current |
ICBO |
Ð |
0.1 |
μAdc |
(VCB = 30 Vdc, IE = 0) |
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ON CHARACTERISTICS(2) |
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DC Current Gain |
hFE |
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Ð |
(IC = 10 mAdc, VCE = 5.0 Vdc) |
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10,000 |
Ð |
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(IC = 100 mAdc, VCE = 5.0 Vdc) |
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20,000 |
Ð |
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Collector-Emitter Saturation Voltage |
VCE(sat) |
Ð |
1.5 |
Vdc |
(IC = 100 mAdc, IB = 0.1 mAdc) |
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Base-Emitter On-Voltage |
VBE(on) |
Ð |
2.0 |
Vdc |
(VCE = 5.0 Vdc, IC = 100 mAdc) |
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DYNAMIC CHARACTERISTICS |
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Current-Gain Ð Bandwidth Product |
fT |
125 |
Ð |
MHz |
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) |
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2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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