Motorola PZTA64T1 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This PNP small-signal darlington transistor is designed for use in preamplifiers
input applications or wherever it is necessary to have a high input impedance.
The device is housed in the SOT-223 package which is designed for medium
power surface mount applications.
• High fT: 125 MHz Minimum
• The SOT-223 Package can be soldered using wave or reflow.
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
• Available in 12 mm Tape and Reel
Use PZTA64T1 to order the 7 inch/1000 unit reel.
Use PZTA64T3 to order the 13 inch/4000 unit reel.
• NPN Complement is PZTA14T1
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Emitter Voltage V
CES
30 Vdc
Collector-Base Voltage V
CBO
30 Vdc
Emitter-Base Voltage V
EBO
10 Vdc
Total Power Dissipation @ TA = 25°C
(1)
P
D
1.5 Watts
Collector Current I
C
500 mAdc
Operating and Storage Temperature Range TJ, T
stg
–65 to +150 °C
DEVICE MARKING
P2V
THERMAL CHARACTERISTICS
Thermal Resistance from Junction to Ambient (surface mounted) R
θJA
83.3 °C/W
Maximum Temperature for Soldering Purposes
Time in Solder Bath
T
L
260
10
°C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by PZTA64T1/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
SOT-223 PACKAGE
PNP SILICON
DARLINGTON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR 2, 4
BASE
1
EMITTER 3
REV 4
PZTA64T1
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
V
(BR)CES
30 — Vdc
Collector-Base Breakdown Voltage
(IC = 100 µA, IE = 0)
V
(BR)CBO
30 — Vdc
Emitter-Base Breakdown Voltage
(IE = 100 µA, IC = 0)
V
(BR)EBO
10 — Vdc
Emitter-Base Cutoff Current
(VBE = 10 Vdc, IC = 0)
I
EBO
— 0.1 µAdc
Collector-Base Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
— 0.1 µAdc
ON CHARACTERISTICS
(2)
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
h
FE
10,000
20,000
—
—
—
Collector-Emitter Saturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
V
CE(sat)
— 1.5 Vdc
Base-Emitter On-Voltage
(VCE = 5.0 Vdc, IC = 100 mAdc)
V
BE(on)
— 2.0 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
f
T
125 — MHz
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
Loading...