MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by PZTA42T1/D
High Voltage Transistor
Surface Mount
NPN Silicon
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COLLECTOR 2,4 |
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BASE |
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1 |
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EMITTER 3 |
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MAXIMUM RATINGS |
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Rating |
Symbol |
Value |
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Unit |
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Collector-Emitter Voltage (Open Base) |
VCEO |
300 |
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Vdc |
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Collector-Base Voltage (Open Emitter) |
VCBO |
300 |
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Vdc |
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Emitter-Base Voltage (Open Collector) |
VEBO |
6.0 |
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Vdc |
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Collector Current (DC) |
IC |
500 |
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mAdc |
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Total Power Dissipation @ T = 25°C(1) |
P |
1.5 |
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Watts |
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A |
D |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
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°C |
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Junction Temperature |
TJ |
150 |
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°C |
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DEVICE MARKING |
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P1D |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
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Unit |
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Thermal Resistance, |
RθJA |
83.3 |
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°C/W |
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Junction-to-Ambient(1) |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
PZTA42T1
Motorola Preferred Device
SOT±223 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
1
3
CASE 318E-04, STYLE 1
TO-261AA
Characteristics |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) |
V |
300 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
(BR)CEO |
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Collector-Base Breakdown Voltage |
V(BR)CBO |
300 |
Ð |
Vdc |
(IC = 100 μAdc, IE = 0) |
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Emitter-Base Breakdown Voltage |
V(BR)EBO |
6.0 |
Ð |
Vdc |
(IE = 100 μAdc, IC = 0) |
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Collector-Base Cutoff Current |
ICBO |
Ð |
0.1 |
μAdc |
(VCB = 200 Vdc, IE = 0) |
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Emitter-Base Cutoff Current |
IEBO |
Ð |
0.1 |
μAdc |
(VBE = 6.0 Vdc, IC = 0) |
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1.Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2.Pulse Test Conditions, tp = 300 μs, δ = 0.02.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1996
PZTA42T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
ON CHARACTERISTICS
DC Current Gain |
hFE |
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Ð |
(IC = 1.0 mAdc, VCE = 10 Vdc) |
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25 |
Ð |
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(IC = 10 mAdc, VCE = 10 Vdc) |
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40 |
Ð |
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(IC = 30 mAdc, VCE = 10 Vdc) |
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40 |
Ð |
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DYNAMIC CHARACTERISTICS |
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Current-Gain Ð Bandwidth Product |
fT |
50 |
Ð |
MHz |
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) |
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Feedback Capacitance |
Cre |
Ð |
3.0 |
pF |
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) |
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Collector-Emitter Saturation Voltage |
VCE(sat) |
Ð |
0.5 |
Vdc |
(IC = 20 mAdc, IB = 2.0 mAdc) |
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Base-Emitter Saturation Voltage |
VBE(sat) |
Ð |
0.9 |
Vdc |
(IC = 20 mAdc, IB = 2.0 mAdc) |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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