MOTOROLA PZT651T1 Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZT651T1/D
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer
applications. The device is housed in the SOT–223 package which is designed for
medium power surface mount applications.
• High Current: 2.0 Amp
• The SOT–223 package can be soldered using wave or reflow.
• SOT–223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering, eliminating the possibility
of damage to the die.
• Available in 12 mm Tape and Reel
Use PZT651T1 to order the 7 inch/1000 unit reel
Use PZT651T3 to order the 13 inch/4000 unit reel
• PNP Complement is PZT751T1
MAXIMUM RATINGS
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current I
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Storage Temperature Range T
Junction Temperature T
(T
= 25°C unless otherwise noted)
C
Rating
(1)
DEVICE MARKING
651
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance from Junction–to–Ambient in Free Air R
Maximum Temperature for Soldering Purposes
Time in Solder Bath
1. Device mounted on a FR–4 glass epoxy printed circuit board using minimum recommended footprint.
COLLECTOR 2,4
BASE
1
EMITTER 3
Symbol Value Unit
CEO
CBO
EBO
P
T
C
D
stg
J
θJA
L
PZT651T1
Motorola Preferred Device
SOT–223 PACKAGE
HIGH CURRENT
NPN SILICON
TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E–04, STYLE 1
TO–261AA
60 Vdc
80 Vdc
5.0 Vdc
2.0 Adc
0.8
6.4
–65 to 150 °C
150 °C
156 °C/W
260
10
Watts
mW/°C
°C
Sec
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1
PZT651T1
(T
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 10 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 100 µAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 µAdc, IC = 0)
Base–Emitter Cutoff Current
(VEB = 4.0 Vdc)
Collector–Base Cutoff Current
(VCB = 80 Vdc, IE = 0)
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 50 mAdc, VCE = 2.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
Collector–Emitter Saturation Voltages
(IC = 2.0 Adc, IB = 200 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
Base–Emitter Voltages
(IC = 1.0 Adc, VCE = 2.0 Vdc)
Base–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 100 mAdc)
Current–Gain — Bandwidth
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%
= 25°C unless otherwise noted)
A
Symbol Min Max Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(on)
V
BE(sat)
f
T
60 — Vdc
80 — Vdc
5.0 — Vdc
— 0.1 µAdc
— 100 nAdc
75
75
75
40
—
—
— 1.0 Vdc
— 1.2 Vdc
75 — MHz
—
—
—
—
0.5
0.3
—
Vdc
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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