MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MXR9745T1/D
Advance Information
The RF Small Signal Line
Silicon Lateral FET
N±Channel Enhancement±Mode MOSFET
Designed for use in low voltage, moderate power amplifiers such as portable analog and digital cellular radios and PC RF modems.
•Performance Specifications at 6 Volt, 850 MHz: Output Power = 31.5 dBm Min
Power Gain = 8.5 dB Typ Efficiency = 60% Min
•Guaranteed Ruggedness at Load VSWR = 20:1
•Available in Tape and Reel Packaging Options: T1 Suffix = 1,000 Units per Reel
•MXR9745RT1 is Gate±Drain Pin Out Reversed. All Electricals Same as MXR9745T1
MXR9745T1
MXR9745RT1
31.5 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR LDMOS FET
CASE 345±03
(MXR9745RT1, STYLE 8) (MXR9745T1, STYLE 9)
(SOT±89)
MAXIMUM RATINGS
Rating |
|
Symbol |
|
Value |
Unit |
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Drain±Source Voltage |
|
VDSS |
|
35 |
Vdc |
|
Drain±Gate Voltage (RGS = 1 MΩ) |
|
VDGO |
|
25 |
Vdc |
|
Gate±Source Voltage |
|
VGS |
|
± 10 |
Vdc |
|
Drain Current ± Continuous |
|
ID |
|
2 |
Adc |
|
Total Device Dissipation @ TC = 50°C |
|
PD |
|
10 |
W |
|
Derate above 50°C |
|
|
|
100 |
mW/°C |
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Storage Temperature Range |
|
Tstg |
± 65 to +150 |
°C |
||
Operating Junction Temperature |
|
TJ |
|
150 |
°C |
|
THERMAL CHARACTERISTICS |
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Characteristic |
|
Symbol |
|
Max |
Unit |
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Thermal Resistance, Junction to Case |
|
RθJC |
|
10 |
°C/W |
|
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
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Characteristic |
Symbol |
Min |
Typ |
|
Max |
Unit |
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OFF CHARACTERISTICS |
|
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Drain±Source Leakage Current |
IDSS |
± |
± |
|
10 |
μAdc |
(VDS = 35 V, VGS = 0) |
|
|
|
|
|
|
Gate±Source Leakage Current |
IGSS |
± |
± |
|
1 |
μAdc |
(VGS = 5 V, VDS = 0) |
|
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NOTE ± CAUTION ± MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
MXR9745T1 MXR9745RT1 |
|
1 |
ELECTRICAL CHARACTERISTICS ± continued (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
|
|
|
|
ON CHARACTERISTICS |
|
|
|
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|
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|
|
Gate Threshold Voltage |
VGS(th) |
1 |
1.3 |
2 |
Vdc |
(VDS = 6 V, ID = 500 μA) |
|
|
|
|
|
Forward Transconductance |
gfs |
± |
550 |
± |
mmhos |
(VDS = 6 V, ID = 400 mA) |
|
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|
|
|
Resistance Drain±Source |
RDS(on) |
± |
1 |
2.5 |
Ω |
(VGS = 4 V, ID = 100 mA) |
|
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
Ciss |
± |
14 |
± |
pF |
(VDS = 6 V, VGS = 0, f = 1 MHz) |
|
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|
|
|
Output Capacitance |
Coss |
± |
11 |
± |
pF |
(VDS = 6 V, VGS = 0, f = 1 MHz) |
|
|
|
|
|
Feedback Capacitance |
Crss |
± |
1.8 |
± |
pF |
(VDS = 6 V, VGS = 0, f = 1 MHz) |
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FUNCTIONAL CHARACTERISTICS |
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Power Gain |
Gps |
8 |
8.5 |
± |
dB |
(VDD = 6 Vdc, Pin = 23 dBm, IDQ = 250 mA, f = 850 MHz) |
|
|
|
|
|
Drain Efficiency |
ηD |
55 |
60 |
± |
% |
(VDD = 6 Vdc, Pin = 23 dBm, IDQ = 250 mA, f = 850 MHz) |
|
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Ruggedness Test |
Ψ |
|
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(VDD = 6 Vdc, Pin = 23 dBm, IDQ = 250 mA, f = 850 MHz, |
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No Degradation in Output Power after Test |
|||
Load VSWR = 20:1, All Phase Angles at Frequency Test) |
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Table 1. Large Signal Impedance
VDD = 6 V, Pin = 23 dBm, IDQ = 250 mA
f |
Zin |
ZOL* |
MHz |
Ohms |
Ohms |
|
|
|
850 |
4.8 ± j6.4 |
6 ± j7.5 |
|
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|
ZOL* is the conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency.
MXR9745T1 MXR9745RT1 |
MOTOROLA RF DEVICE DATA |
2 |
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