Motorola MTY55N20E Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high
energy in the avalanche and commutation modes. This new energy
efficient design also o ffers a drain–to–source diode with f ast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters, PWM motor controls,
and other inductive loads. The avalanche energy capability is
specified to eliminate the guesswork in designs where inductive
loads are switched and o ffer additional safety margin against
unexpected voltage transients.
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–Source Voltage V
DSS
200 Vdc
Drain–Gate Voltage (RGS = 1 MΩ) V
DGR
200 Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current — Continuous @ TC = 25°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
DM
55
165
Adc
Apk
Total Power Dissipation
Derate above 25°C
P
D
300
2.38
Watts
W/°C
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 110 Apk, L = 0.3 mH, RG = 25 Ω )
E
AS
3000 mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
0.42
40
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTY55N20E/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
TMOS POWER FET
55 AMPERES
200 VOLTS
R
DS(on)
= 0.028 OHM
CASE 340G–02, STYLE 1
TO–264
Motorola Preferred Device
D
S
G
MTY55N20E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
Temperature Coefficient (Positive)
V
(BR)DSS
200
—
—
250
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
10
200
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I
GSS
— — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2
—
—
7
4
—
Vdc
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 27.5 Adc) R
DS(on)
— — 0.028 Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 55 Adc)
(ID = 27.5 Adc, TJ = 125°C)
V
DS(on)
—
—
1.3
—
1.6
1.8
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 27.5 Adc) g
FS
30 37 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 7200 10080 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
C
oss
— 1800 2520
Reverse Transfer Capacitance
f = 1 MHz)
C
rss
— 460 920
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
d(on)
— 33 66 ns
Rise Time
t
r
— 200 400
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 4.7 Ω)
t
d(off)
— 150 300
Fall Time
G
= 4.7 Ω)
t
f
— 170 340
Q
T
— 245 343 nC
(See Figure 8)
DS
= 160 Vdc, ID = 55 Adc,
Q
1
— 33 —
(VDS = 160 Vdc, ID = 55 Adc,
VGS = 10 Vdc)
Q
2
— 128 —
Q
3
— 79 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 55 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.75
1.1
1.2
—
Vdc
t
rr
— 310 —
(See Figure 14)
S
= 55 Adc, VGS = 0 Vdc,
t
a
— 220 —
(IS = 55 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
t
b
— 90 —
Reverse Recovery Stored Charge Q
RR
— 4.6 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L
D
— 4.5 — nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
— 13 — nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Gate Charge
Reverse Recovery Time
(VDD = 100 Vdc, ID = 55 Adc,
(V
(I
ns
MTY55N20E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
10000
1000
100
10
1
0 50 100 150 200
100°C
2
1.75
1.5
1.25
0.5
0
–50 –25 0 25 50 75 100 125 150
0.027
0.026
0.025
0.024
0.023
0.022
ID, DRAIN CURRENT (AMPS)
15 V
0.05
0.04
0.03
0.02
0.01
0
0 40 80 1201006020
120
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
0
TJ = 25°C
VGS = 10 V
VDS ≥ 10 V
VGS = 10 V
TJ = 100°C
–55°C
TJ = 25°C
VGS = 10 V
VGS = 0 V
100
80
60
40
20
120
100
80
60
40
20
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
0 40 80 1201006020
TJ = 125°C
8 V
9 V
6 V
5 V
4 V
100°C
25°C
TJ = –55°C
25°C
VGS = 10 V
ID = 27.5 A
25°C
1
0.75
0.25
7 V
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