Motorola MTV6N100E Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
# ! !
" "!
N–Channel Enhancement–Mode Silicon Gate
The D3PAK package has the capability of housing the largest chip
size of any standard, plastic, surface mount power semiconductor.
This allows it to be used in applications that require surface mount
components with higher power and lower R
DS(on)
capabilities. This
high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–
source diode with a fast recovery time. Designed for high voltage,
high speed switching applications in surface mount PWM motor
controls and both ac–dc and dc–dc power supplies. These devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Short Heatsink Tab Manufactured – Not Sheared
• Specifically Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm, 13–inch/500 Unit Tape & Reel, Add –RL Suffix to Part Number
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
1000 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
1000 Vdc
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
6.0
4.2
18
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TC = 25°C (1)
P
D
178
1.43
2.0
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 6.0 Apk, L = 27.77 mH, RG = 25 Ω )
E
AS
720
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
R
θJC
R
θJA
R
θJA
0.70
62.5
35
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MTV6N100E/D
SEMICONDUCTOR TECHNICAL DATA
CASE 433–01, Style 2
D3PAK Surface Mount
TMOS POWER FET
6.0 AMPERES
1000 VOLTS
R
DS(on)
= 1.5 OHM
D
S
G
Motorola, Inc. 1996
MTV6N100E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
1000
—
—
1270
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 1000 Vdc, VGS = 0 Vdc)
(VDS = 1000 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
10
100
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I
GSS
— — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
—
3.0
7.0
4.0
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc) R
DS(on)
— 1.28 1.5 Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ = 125°C)
V
DS(on)
—
—
7.9
—
14.4
9.5
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 3.0 Adc) g
FS
4.0 7.2 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 3000 4210 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 219 440
Transfer Capacitance
f = 1.0 MHz)
C
rss
— 43 90
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
d(on)
— 27 45 ns
Rise Time
t
r
— 29 65
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
t
d(off)
— 93 170
Fall Time
G
= 9.1 Ω)
t
f
— 43 95
Q
T
— 66 100 nC
(See Figure 8)
DS
= 400 Vdc, ID = 6.0 Adc,
Q
1
— 12.5 —
(VDS = 400 Vdc, ID = 6.0 Adc,
VGS = 10 Vdc)
Q
2
— 25.9 —
Q
3
— 26 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 6.0 Adc, VGS = 0 Vdc)
(IS = 6.0 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.81
0.64
1.0
—
Vdc
t
rr
— 735 —
S
= 6.0 Adc, VGS = 0 Vdc,
t
a
— 188 —
(IS = 6.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
t
b
— 547 —
Reverse Recovery Stored Charge Q
RR
— 4.7 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L
D
— 4.5 —
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
— 13 —
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Gate Charge
Reverse Recovery Time
(VDD = 500 Vdc, ID = 6.0 Adc,
(V
(I
ns
MTV6N100E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
100000
10000
1000
100
10
1
0 100 200 300 400 500 600 700 800 900 1000
100°C
25°C
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
DSS
, LEAKAGE (nA)
VGS = 0 V
TJ = 125°C
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
0 4 8 12 16 20
12
8
2 6 10 14 18
4
5 V
VDS ≥ 10 V
2.0 2.8 3.6 4.4 5.22.4 3.2 4.0 4.8
10
12
8
4
0
TJ = –55°C
100°C
2
6
4 V
10
6
2
0
6 V
TJ = 25°C
VGS = 10 V
25°C
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 10 V
15 V
1.24
1.44
1.56
1.32
0 2 8 111 7 9 120 2 6 8
0.5
1.3
2.1
2.9
2.5
1.7
0.9
4 10 12
TJ = 100°C
25°C
–55°C
VGS = 10 V
1.40
1.48
1.52
1.36
1.28
3 54 6 10
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
–50
0.4
0.8
1.2
2.0
2.8
–25 0 25 50 75 100 125 150
VGS = 10 V
ID = 3 A
2.4
1.6
Loading...