Motorola MTV25N50E Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
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N–Channel Enhancement–Mode Silicon Gate
The D3PAK package has the capability of housing the largest chip
size of any standard, plastic, surface mount power semiconductor.
This allows it to be used in applications that require surface mount
components with higher power and lower R
DS(on)
capabilities. This
high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this advanced TMOS E–FET is
designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–
source diode with a fast recovery time. Designed for high voltage,
high speed switching applications in surface mount PWM motor
controls and both ac–dc and dc–dc power supplies. These devices
are particularly well suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer additional
safety margin against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Short Heatsink Tab Manufactured – Not Sheared
• Specifically Designed Leadframe for Maximum Power Dissipation
• Available in 24 mm, 13–inch/500 Unit Tape & Reel, Add –RL Suffix to Part Number
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
500 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
500 Vdc
Gate–to–Source Voltage — Continuous V
GS
±20 Vdc
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
25
15.8
88
Adc
Apk
Total Power Dissipation
Derate above 25°C
P
D
250
2.0
Watts
W/°C
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 25 Apk, L = 3.0 mH, RG = 25 Ω )
E
AS
938
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
R
θJC
R
θJA
R
θJA
0.5
62.5
35
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MTV25N50E/D
SEMICONDUCTOR TECHNICAL DATA
CASE 433–01, Style 2
D3PAK Surface Mount
TMOS POWER FET
25 AMPERES
500 VOLTS
R
DS(on)
= 0.200 OHM
D
S
G
N–Channel
Motorola, Inc. 1996
MTV25N50E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
500
—
—
0.51
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
10
100
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I
GSS
— — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
—
2.9
7.0
4.0
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 12.5 Adc) R
DS(on)
— 0.19 0.2 Ohm
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 25 Adc)
(VGS = 10 Vdc, ID = 12.5 Adc, TJ = 125°C)
V
DS(on)
—
—
5.4
—
6.0
5.3
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 12.5 Adc) g
FS
11 17 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 4700 6580 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 520 728
Transfer Capacitance
f = 1.0 MHz)
C
rss
— 200 280
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
d(on)
— 37 70 ns
Rise Time
t
r
— 137 280
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
t
d(off)
— 118 240
Fall Time
G
= 9.1 Ω)
t
f
— 112 230
Q
T
— 132 180 nC
(See Figure 8)
DS
= 400 Vdc, ID = 25 Adc,
Q
1
— 29 —
(VDS = 400 Vdc, ID = 25 Adc,
VGS = 10 Vdc)
Q
2
— 63 —
Q
3
— 61 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 25 Adc, VGS = 0 Vdc)
(IS = 25 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.9
0.79
1.1
—
Vdc
t
rr
— 501 —
S
= 25 Adc, VGS = 0 Vdc,
t
a
— 332 —
(IS = 25 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
t
b
— 170 —
Reverse Recovery Stored Charge Q
RR
— 9.42 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L
D
— 5.0 —
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
— 13 —
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Gate Charge
Reverse Recovery Time
(VDD = 250 Vdc, ID = 25 Adc,
(V
(I
ns
MTV25N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
0 4 8 12 16 20
0
10
20
30
50
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0 10 20
0.10
0.20
0.25
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 10 20 30
0.18
0.24
0.28
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0
0.5
1.0
1.5
2.0
0 100 200 300 400 500
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
0 50 100 150
TJ = 25
°C
VDS w 10 V
TJ = –55
°C
25
°C
100
°C
TJ = 100
°C
25
°C
–55
°C
TJ = 25
°C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 12.5 A
9 V
8 V
6 V
4 V
7 V
0.15
0.05
30 40 50
0.26
40 50
VGS = 10 V
15 V
40
2 4 5 6 7 8
0
10
20
30
50
40
0.20
0.22
2.5
5 V
3
0.35
0.45
0.40
0.30
0
TJ = 125
°C
25
°C
100
°C
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