Motorola MTSF2P03HDR2 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
Medium Power Surface Mount Products
Micro8 devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8 devices are des igned for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
• Miniature Micro8 Surface Mount Package — Saves Board Space
• Extremely Low Profile (<1.1 mm) for thin applications such as
PCMCIA cards
• Ultra Low R
DS(on)
Provides Higher Efficiency and Extends
Battery Life
• Logic Level Gate Drive — Can Be Driven by Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• I
DSS
Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for Micro8 Package Provided
DEVICE MARKING ORDERING INFORMATION
Device Reel Size Tape Width Quantity
AE
MTSF2P03HDR2 13″ 12 mm embossed tape 4000 units
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves —representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MTSF2P03HD/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1997
D
S
G
SINGLE TMOS
POWER MOSFET
2.7 AMPERES
30 VOLTS
R
DS(on)
= 0.090 OHM
Motorola Preferred Device
Source
1
2
3
4
8
7
6
5
Top View
Source
Source
Gate
Drain
Drain
Drain
Drain
CASE 846A–02, Style 1
Micro8
REV 3
MTSF2P03HD
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol Max Unit
Drain–to–Source Voltage V
DSS
30 V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
30 V
Gate–to–Source Voltage — Continuous V
GS
± 20 V
1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current
(1)
R
THJA
P
D
I
D
I
D
I
DM
70
1.79
14.29
4.1
3.2
32
°C/W
Watts
mW/°C
A
A
A
Minimum
FR–4 or G–10 PCB
Figure 2 below
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current
(1)
R
THJA
P
D
I
D
I
D
I
DM
160
0.78
6.25
2.7
2.1
21
°C/W
Watts
mW/°C
A
A
A
Operating and Storage Temperature Range TJ, T
stg
– 55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 159 mH, RG = 25 W)
E
AS
715
mJ
(1) Repetitive rating; pulse width limited by maximum junction temperature.
Figure 1. 1.0 Inch Square FR–4 or G–10 PCB Figure 2. Minimum FR–4 or G–10 PCB
MTSF2P03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)
V
(BR)DSS
30
—
—
30
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
1.0
25
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) I
GSS
— — 100 nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3)
(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
—
1.9
3.8
3.0
—
Vdc
mV/°C
Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3)
(VGS = 10 Vdc, ID = 2.4 Adc)
(VGS = 4.5 Vdc, ID = 1.2 Adc)
R
DS(on)
—
—
70
110
90
150
mΩ
Forward Transconductance (VDS = 15 Vdc, ID = 1.2 Adc) (1) g
FS
2.0 3.1 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 450 — pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
)
C
oss
— 220 —
Transfer Capacitance
f = 1.0 MHz)
C
rss
— 70 —
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
t
d(on)
— 12 —
ns
Rise Time
(VDS = 15 Vdc, ID = 2.4 Adc,
t
r
— 58 —
Turn–Off Delay Time
(
DS
,
D
,
VGS = 10 Vdc, RG = 6.0 Ω) (1)
t
d(off)
— 30 —
Fall Time t
f
— 50 —
Turn–On Delay Time
t
d(on)
— 19 —
Rise Time
(VDD = 15 Vdc, ID = 1.2 Adc,
t
r
— 39 —
Turn–Off Delay Time
(
DD
,
D
,
VGS = 4.5 Vdc, RG = 6.0 Ω) (1)
t
d(off)
— 35 —
Fall Time t
f
— 37 —
Gate Charge
Q
T
— 16.6 23 nC
(VDS = 24 Vdc, ID = 2.4 Adc,
Q
1
— 1.6 —
(
DS
,
D
,
VGS = 10 Vdc) (1)
Q
2
— 5.4 —
Q
3
— 4.4 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.4 Adc, VGS = 0 Vdc) (1)
(IS = 2.4 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.9
0.7
1.3
—
Vdc
Reverse Recovery Time
t
rr
— 32 —
ns
(IS = 2.4 Adc, VGS = 0 Vdc,
t
a
— 21 —
(
S
,
GS
,
dIS/dt = 100 A/µs) (1)
t
b
— 11 —
Reverse Recovery Stored Charge Q
RR
— 0.036 — µC
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
MTSF2P03HD
4
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
4.5 V
VGS = 10 V
TJ = 25°C
TJ = 25°C
3.5 V
3.3 V
4.5 V
6 V
VGS = 10 V
2.9 V
2.7 V
I
DSS
, LEAKAGE (nA)
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0
0 0.5 1.5 2
0
1
3
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 3. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.04
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = –55°C
25°C
100°C
4
2
2
4
1
3.5 42
0.14
01 2
10
0 5 15 25
30
0.08
3
34
R
DS(on)
, DRAIN–TO–SOURCE RESIST ANCE (NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
–50 0 50 100 150
0
0.5
1.0
1.5
2.0
VGS = 10 V
ID = 1.2 A
1257525–25
VGS = 0 V
1
32.5
0.10
0.12
1000
25°C
0.2
0.25
0.3
0.15
0.05
0.1
24 86
1
V
GS
, GATE–T O–SOURCE VOLT AGE (VOLTS)
ID = 2.4 A
TJ = 25
°
C
0
0.06
5
4.1 V
3.9 V
3.7 V
5
1.5 4.5
357
5
0.1
10
3.1 V
0.5
2.5
4.5
1.5
3.5
910
0
20
100°C
125°C
Loading...