Motorola MTP8N50E Datasheet
SEMICONDUCTOR TECHNICAL DATA
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters, PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and commutating safe
operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
Specified at Elevated Temperature
DS(on)
G
Order this document
by MTP8N50E/D
TMOS POWER FET
8.0 AMPERES
500 VOL TS
R
DS(on)
D
S
= 0.8 OHM
MAXIMUM RATINGS
Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MW)
Gate–to–Source Voltage – Continuous
Gate–to–Source Voltage – Non–repetitive (tp ≤ 10 ms)
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy – STAR TING TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 W)
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 5 sec. T
(TJ = 25°C unless otherwise noted)
Rating
CASE 221A–06, Style 5
TO-220AB
Symbol Value Unit
500 Vdc
500 Vdc
±20
±40
8.0
5.0
32
125
1.0
–55 to 150 °C
510 mJ
1.0
62.5
260 °C
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C/W
V
V
V
I
E
R
R
DSS
DGR
GS
GSM
I
D
I
D
DM
P
D
stg
AS
q
JC
q
JA
L
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
REV 2
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
1
MTP8N50E
)
f = 1.0 MHz)
(R
C17n
W
)
(
DS
,
D
,
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 400 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current
(VGS = ±20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 4.0 Adc)
Drain–to–Source On–Voltage (VGS = 10 Vdc)
(ID = 8.0 Adc)
(ID = 4.0 Adc, TJ = 125°C)
Forward Transconductance
(VDS = 15 Vdc, ID = 4.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time t
Gate Charge
(see Figure 8)
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 8.0 Adc, VGS = 0 Vdc) — 1.2 2.0
(IS = 8.0 Adc, VGS = 0 Vdc, TJ = 125°C) — 1.1 —
Reverse Recovery Time
Reverse Recovery Stored Charge Q
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
(2) Switching characteristics are independent of operating junction temperature.
(1)
(T
C
Characteristic
(VDS = 25 Vdc, VGS = 0 Vdc,
(2)
(VDS = 400 Vdc, ID = 8.0 Adc,
(IS = 8.0 Adc, VGS = 0 Vdc,
= 25°C unless otherwise noted)
f = 1.0 MHz
+
go
VGS = 10 Vdc)
dIS/dt = 100 A/ms)
= 9.1
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
V
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
f
Q
T
Q
1
Q
2
Q
3
V
SD
t
rr
t
a
t
b
RR
L
D
L
S
500
—
—
—
— — 100
2.0
—
— 0.6 0.8
—
—
4.0 — —
— 1450 1680 pF
— 190 246
— 45.4 144
— 15 50 ns
— 33 72
— 40 150
— 32 60
— 40 64 nC
— 8.0 —
— 17 —
— 17.3 —
— 320 — ns
— 179 —
— 141 —
— 3.0 —
— 4.5 —
— 7.5 —
—
500
—
—
2.8
6.3
5.0
—
—
—
250
1000
4.0
—
7.2
6.4
Vdc
mV/°C
m
Adc
nAdc
Vdc
mV/°C
Ohms
Vdc
mhos
Vdc
m
C
nH
2
Motorola TMOS Power MOSFET Transistor Device Data
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