Motorola MTP2955V Datasheet
SEMICONDUCTOR TECHNICAL DATA
P–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFET s. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
• On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low R
• Faster Switching than E–FET Predecessors
DS(on)
Technology
G
Order this document
by MTP2955V/D
TMOS POWER FET
12 AMPERES
60 VOLTS
R
TM
D
DS(on)
= 0.230 OHM
Features Common to TMOS V and TMOS E–FETS
• Avalanche Energy Specified
• I
DSS
and V
Specified at Elevated Temperature
DS(on)
S
CASE 221A–09, Style 5
TO–220AB
• Static Parameters are the Same for both TMOS V and TMOS E–FET
MAXIMUM RATINGS
Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
Total Power Dissipation
Derate above 25°C
Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
V
V
I
E
R
R
DSS
DGR
GS
GSM
I
D
I
D
DM
P
D
stg
AS
θJC
θJA
L
60 Vdc
60 Vdc
± 15
± 25
12
8.0
42
60
0.40
–55 to 175 °C
216 mJ
2.5
62.5
260 °C
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C/W
REV 3
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
MTP2955V
)
f = 1.0 MHz)
V
G
)
(
DS
,
D
,
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (3)
(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) I
ON CHARACTERISTICS (1)
Gate Threshold Voltage (Cpk ≥ 2.0) (3)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain–to–Source On–Resistance (Cpk ≥ 1.5) (3)
(VGS = 10 Vdc, ID = 6.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 12 Adc)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C)
Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
Reverse Recovery Time
Reverse Recovery Stored Charge Q
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
(T
= 25°C unless otherwise noted)
J
Characteristic
(VDS = 25 Vdc, VGS = 0 Vdc,
(VDD = 30 Vdc, ID = 12 Adc,
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
Max limit – Typ
3 x SIGMA
f = 1.0 MHz
= 10 Vdc,
GS
RG = 9.1 Ω)
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc)
(IS = 12 Adc, VGS = 0 Vdc)
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
GSS
V
GS(th)
R
DS(on)
V
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
3
V
SD
t
rr
t
a
t
b
RR
L
D
L
S
60
—
—
—
— — 100 nAdc
2.0
—
— 0.185 0.230
—
—
3.0 5.0 — mhos
— 550 700 pF
— 200 280
— 50 100
— 15 30 ns
— 50 100
— 24 50
— 39 80
— 19 30 nC
— 4.0 —
— 9.0 —
— 7.0 —
—
—
— 115 —
— 90 —
— 25 —
— 0.53 — µC
— 4.5 —
— 7.5 —
—
58
—
—
2.8
5.0
—
—
1.8
1.5
—
—
10
100
4.0
—
2.9
2.5
3.0
—
mV/°C
mV/°C
Vdc
µAdc
Vdc
Ohm
Vdc
Vdc
ns
nH
nH
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MTP2955V
25
TJ = 25
°C
20
15
10
, DRAIN CURRENT (AMPS)
D
I
5
0
012345
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
VGS = 10 V
Figure 1. On–Region Characteristics
0.40
VGS = 10 V
0.35
0.30
0.25
0.20
TJ = 100
25
°C
9 V
678910
°C
8 V
7 V
6 V
5 V
24
VDS ≥ 10 V
21
18
15
12
9
, DRAIN CURRENT (AMPS)
6
D
I
3
0
246 810
3579
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
TJ = – 55
25
°C
°C
100
°C
Figure 2. Transfer Characteristics
0.250
TJ = 25
0.225
0.200
0.175
0.150
°C
VGS = 10 V
15 V
0.15
0.10
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.05
DS(on)
0
R
03 6 15 24
ID, DRAIN CURRENT (AMPS)
–55
°C
12 21 3 12 15
189
Figure 3. On–Resistance versus Drain Current
and T emperature
2.0
VGS = 10 V
1.8
ID = 6 A
1.6
1.4
1.2
1.0
0.8
(NORMALIZED)
0.6
, DRAIN–TO–SOURCE RESIST ANCE
0.4
0.2
DS(on)
R
0
–50
– 25 0 25 50 75 100 125 150
°
TJ, JUNCTION TEMPERATURE (
C)
175
0.125
0.100
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.075
DS(on)
0.050
R
0 6 21 24
918
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
1000
VGS = 0 V
TJ = 125
°C
100
100
, LEAKAGE (nA)
DSS
I
10
020 5060
10 30 40
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
°C
Figure 5. On–Resistance Variation with
Temperature
Motorola TMOS Power MOSFET Transistor Device Data
Figure 6. Drain–T o–Source Leakage
Current versus Voltage
3
Loading...