Motorola MTP1306 Datasheet


SEMICONDUCTOR TECHNICAL DATA
 
 
   
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commuta­tion modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable
to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
Specified at Elevated Temperature
DS(on)
Order this document
by MTP1306/D

TMOS POWER FET
75 AMPERES
30 VOLTS
R
DS(on)
= 0.0065 OHM
MAXIMUM RATINGS
Drain–to–Source Voltage V Drain–to–Gate Voltage (RGS = 1.0 M) V Gate–to–Source Voltage — Continuous
Drain Current — Continuous
Total Power Dissipation
Derate above 25°C Operating and Storage Temperature Range TJ, T Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 75 Apk, L = 0.1 mH, RG = 25 ) Thermal Resistance — Junction–to–Case
Maximum Lead Temperature for Soldering Purposes, 1/8 from Case for 5.0 seconds T
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.
(TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
— Non–Repetitive (tp 10 ms)
— Continuous @ 100°C — Single Pulse (tp 10 µs)
— Junction–to–Ambient
V
V
I
E
R R
DSS
DGR
GS
GSM
I
D
I
D
DM P
D
stg
AS
θJC θJA
L
CASE 221A–06
TO–220AB
30 Vdc 30 Vdc
±20 ±20
75 59
225 150
1.2
–55 to 150 °C
280
0.8
62.5 260 °C
Vdc Vpk
Adc
Apk
Watts
W/°C
mJ
°C/W
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1997
1
MTP1306
)
f = 1.0 MHz)
V
G
)
(
DS
,
D
,
(
S
,
GS
,
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) I
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 38 Adc) (VGS = 5.0 Vdc, ID = 38 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 75 Adc) (VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C)
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc) g
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge Q
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature.
(1)
(T
= 25°C unless otherwise noted)
J
Characteristic
(VDS = 25 Vdc, VGS = 0 Vdc,
(2)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
f = 1.0 MHz
(VDD = 15 Vdc, ID = 75 Adc,
(VDS = 24 Vdc, ID = 75 Adc,
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
= 5.0 Vdc,
GS RG = 4.7 )
VGS = 5.0 Vdc)
dIS/dt = 100 A/µs)
Symbol Min Typ Max Unit
V
(BR)DSS
I
DSS
GSS
V
GS(th)
R
DS(on)
V
DS(on)
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
Q
3
V
SD
t
rr
t
a
t
b
RR
30
— —
100 nAdc
1.0 1.5 2.0
— —
— —
15 55 mhos
2560 3584 pF — 1305 1827 — 386 772
17 35 ns — 170 340 — 68 136 — 145 290 — 50 70 nC — 8.3 — — 25.3 — — 17.2
— —
84 — — 35 — — 53 — — 0.13 µC
— —
5.8
7.4
0.44 —
0.75
0.64
10
100
6.5
8.5
0.5
0.38
1.1 —
Vdc
µAdc
Vdc
m
W
Vdc
Vdc
ns
2
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
MTP1306
150
125
TJ = 25°C
100
75
50
, DRAIN CURRENT (AMPS)
D
I
25
0
0 0.25 0.75 1.25 1.5 2.0
VGS = 10 V
0.5 1.0 1.75
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
5.0 V
4.0 V
Figure 1. On–Region Characteristics
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
, DRAIN–TO–SOURCE RESIST ANCE (OHMS)
0.001 0
DS(on)
R
20 40 80
TJ = 100°C
25°C
–55°C
60 100 140 60 80 100
ID, DRAIN CURRENT (AMPS)
VGS ≥ 10 V
120
180
VDS ≥ 10 V
160 140 120 100
80 60
, DRAIN CURRENT (AMPS)
D
40
I
20
0
2.0 2.5 3.0 3.5 4.0 4.5
25°C
125°C
TJ = –55°C
VGS, GATE–T O–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.009 TJ = 25°C
0.008
0.007
0.006
0.005
, DRAIN–TO–SOURCE ON–RESISTANCE (OHMS)
0.004
20 40 90
DS(on)
R
30 50 70 150120 140130110
VGS = 5.0 V
10 V
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and T emperature
2.0 VGS = 10 V
ID = 38 A
1.5
1.0
(NORMALIZED)
0.5
, DRAIN–TO–SOURCE RESIST ANCE
DS(on)
R
0 –50
–25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (
Figure 5. On–Resistance Variation with
Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
10,000
1000
, LEAKAGE (nA)
100
DSS
I
10
5.0
°
C)
10 15 20 25 30
VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)
TJ = 125°C
100°C
Figure 6. Drain–T o–Source Leakage
Current versus Voltage
Motorola TMOS Power MOSFET Transistor Device Data
3
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