Motorola MTIL117 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The MTIL117 device consists of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
Applications
• Appliances, Measuring Instruments
• General Purpose Switching Circuits
• Programmable Controllers
• Portable Electronics
• Interfacing and coupling systems of different potentials and impedances
• Telecommunications Equipment
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by MTIL117/D
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
SCHEMATIC
MAXIMUM RATINGS
INPUT LED
Reverse Voltage V
Forward Current — Continuous I
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector–Base Voltage V
Collector Current — Continuous I
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
TOTAL DEVICE
Isolation Surge Voltage
(Peak ac Voltage, 60 Hz, 1 sec Duration)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
Ambient Operating Temperature Range
Storage Temperature Range
Soldering Temperature (10 sec, 1/16″ from case) T
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
(TA = 25°C unless otherwise noted)
Rating
(1)
(2)
(2)
Symbol Value Unit
6 Volts
60 mA
100
1.41
30 Volts
7 Volts
70 Volts
50 mA
50
1.76
7500 Vac(pk)
250
2.94
–55 to +100 °C
–55 to +150 °C
260 °C
mW/°C
mW/°C
mW/°C
P
CEO
EBO
CBO
P
V
ISO
P
T
T
R
F
D
C
D
D
A
stg
L
mW
mW
mW
1
2
3
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
6
5
4
Motorola Optoelectronics Device Data
Motorola, Inc. 1997
1
MTIL117
CEO
ELECTRICAL CHARACTERISTICS
Characteristic
INPUT LED
Forward Voltage (IF = 16 mA) TA = 0–70°C
Reverse Leakage Current (VR = 3 V) I
Capacitance (V = 0 V, f = 1 MHz) C
OUTPUT TRANSISTOR
Collector–Emitter Dark Current
(TA = 25°C unless otherwise noted)
TA = –55°C
TA = 100°C
(VCE = 10 V, TA = 25°C)
(1)
Symbol Min Typ
V
I
CEO
F
R
J
—
—
—
— 0.05 10 µA
— 18 — pF
— 3 50 nA
1.15
1.3
1.05
(1)
Max Unit
1.4
—
—
Volts
(VCB = 30 V, TA = 70°C) I
Collector–Base Dark Current (VCB = 10 V) I
Collector–Emitter Breakdown Voltage (IC = 1 mA) V
Collector–Base Breakdown Voltage (IC = 10 µA) V
Emitter–Base Breakdown Voltage (IE = 10 µA) V
DC Current Gain (IC = 1 mA, VCE = 5 V) (Typical Value) h
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0) C
Collector–Base Capacitance (f = 1 MHz, VCB = 0) C
Emitter–Base Capacitance (f = 1 MHz, VEB = 0) C
COUPLED
Output Collector Current
(IF = 10 mA, VCE = 10 V)
Collector–Emitter Saturation Voltage (IC = 100 µA, IF = 1 mA) V
Turn–On Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)
Turn–Off Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)
Rise Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)
Fall Time (IC = 2 mA, VCC = 10 V, RL = 100 Ω)
Isolation Voltage (f = 60 Hz, t = 1 sec)
Isolation Resistance (V = 500 V)
Isolation Capacitance (V = 0 V , f = 1 MHz)
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 14.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
(4)
(4)
(4)
(3)
(3)
(3)
(3)
CEO
CBO
(BR)CEO
(BR)CBO
(BR)EBO
FE
CE
CB
EB
IC (CTR)
CE(sat)
t
on
t
off
t
t
V
ISO
R
ISO
C
ISO
— 0.05 50 µA
— 0.2 20 nA
30 45 — Volts
70 100 — Volts
7 7.8 — Volts
— 600 — —
— 7 — pF
— 19 — pF
— 9 — pF
(2)
0.5 (50) 1 (100) — mA (%)
— 0.22 0.5 Volts
— — 10 µs
— — 10 µs
r
f
— 3.8 — µs
— 5.6 — µs
7500 — — Vac(pk)
11
10
— 0.2 2 pF
— — Ω
2
Motorola Optoelectronics Device Data
1.4
1.3
1.2
1.1
TA = –55°C
TA = 25°C
1.5
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25
1.0
CTR
°
C
CE(sat) VCE
= 0.4 V
MTIL117
NCTR
NCTR
(sat)
, FORWARD VOLTAGE (V)
F
V
1.0
0.9
0.8
0.7
TA = 85°C
0.5
NCTR, NORMALIZED CTR
1.0 1.0
IF, FORWARD CURRENT (mA)
10 1000.1
0
TA = 25°C
10 1000
IF, LED CURRENT (mA)
Figure 1. Forward Voltage vs. Forward Current Figure 2. Normalized Non–Saturated and
Saturated CTR, TA = 25°C vs. LED Current
1.5
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25
°
CTR
CE(sat) VCE
C
= 0.4 V
1.0
0.5
NCTR, NORMALIZED CTR
NCTR
TA = 50°C
NCTR
(sat)
1.5
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25
°
CTR
CE(sat) VCE
C
= 0.4 V
1.0
0.5
NCTR, NORMALIZED CTR
NCTR
TA = 70°C
NCTR
(sat)
0
1.0
IF, LED CURRENT (mA)
10 1000.1
Figure 3. Normalized Non–Saturated and Saturated
CTR, TA = 50°C vs. LED Current
1.5
NORMALIZED TO:
VCE = 10 V
IF = 10 mA
TA = 25
°
CTR
CE(sat) VCE
C
= 0.4 V
1.0
IF, LED CURRENT (mA)
1.0
0.5
NCTR, NORMALIZED CTR
0
0
1.0
IF, LED CURRENT (mA)
10 1000.1
Figure 4. Normalized Non–Saturated and Saturated
CTR, TA = 70°C vs. LED Current
NCTR
TA = 85°C
NCTR
(sat)
10 1000.1
Figure 5. Normalized Non–Saturated and Saturated
Motorola Optoelectronics Device Data
CTR, TA = 85°C vs. LED Current
3
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