Motorola MTDF1P02HD Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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by MTDF1P02HD/D

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Medium Power Surface Mount Products

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Micro8 devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta ­tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8  devices are des igned for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.

• Miniature Micro8 Surface Mount Package — Saves Board

Space

• Extremely Low Profile (<1.1 mm) for thin applications such as

PCMCIA cards

• Ultra Low R

tery Life

• Logic Level Gate Drive — Can Be Driven by Logic ICs

• Diode Is Characterized for Use In Bridge Circuits

• Diode Exhibits High Speed, With Soft Recovery

• I

• Avalanche Energy Specified

• Mounting Information for Micro8 Package Provided

Specified at Elevated Temperature

DSS

Provides Higher Efficiency and Extends Bat-

DS(on)



Motorola Preferred Device

DUAL TMOS

POWER MOSFET

1.6 AMPERES
20 VOLTS

R



D

CASE 846A–02, Style 2

G

Source1

S

Gate1

Source2

Gate2

DS(on)

= 175 mOHM

Micro8

1

8

2

7

3

6

4

5

Top View

Drain1
Drain1
Drain2
Drain2

DEVICE MARKING ORDERING INFORMATION

Device Reel Size Tape Width Quantity

MTDF1P02HD 13″ 12 mm embossed tape 4000 units

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1997

1

MTDF1P02HD

MAXIMUM RATINGS

Drain–to–Source Voltage V
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
Gate–to–Source Voltage — Continuous V
1 inch SQ.

FR–4 or G–10 PCB
Figure 1 below

1 die operating
Steady State

Minimum
FR–4 or G–10 PCB
Figure 2 below

1 die operating
Steady State

Minimum
FR–4 or G–10 PCB
Figure 2 below

2 die operating
Steady State

Operating and Storage Temperature Range TJ, T
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 3.6 Apk, L = 25 mH, RG = 25 W)

(1) Repetitive rating; pulse width limited by maximum junction temperature.

(TJ = 25°C unless otherwise noted)

Rating

Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current

Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current

Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current

(1)

(1)

(1)

Symbol Max Unit

20 V
20 V

± 8.0 V

100

1.25
10

2.3

1.9
19

200

0.63

5.0

1.6

1.3
13

300

0.42

3.33

1.3

1.1

11

– 55 to 150 °C

160

°C/W

Watts

mW/°C

°C/W

Watts

mW/°C

°C/W

Watts

mW/°C

mJ

A
A
A

A
A
A

A
A
A

R

THJA

I

R

THJA

I

R

THJA

I

E

DSS

DGR

GS

P

D

I

D

I

D

DM

P

D

I

D

I

D

DM

P

D

I

D

I

D

DM

stg

AS

Figure 1. 1.0 Inch Square FR–4 or G–10 PCB Figure 2. Minimum FR–4 or G–10 PCB

2

Motorola TMOS Power MOSFET Transistor Device Data

MTDF1P02HD

)

f = 1.0 MHz)

(

DS

,

D

,

(

DD

,

D

,

(

DS

,

D

,

)

dIS/dt = 100 A/µs)

(1)

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3)

(VGS = 0 Vdc, ID = 0.25 mAdc)
T emperature Coef ficient (Positive)

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) I

ON CHARACTERISTICS

Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3)

(VDS = VGS, ID = 0.25 mAdc)
Threshold Temperature Coefficient (Negative)

Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3)

(VGS = 4.5 Vdc, ID = 1.6 Adc)
(VGS = 2.7 Vdc, ID = 0.8 Adc)

Forward Transconductance (VDS = 10 Vdc, ID = 0.6 Adc) (1) g

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time t
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time t
Gate Charge

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

Reverse Recovery Time

Reverse Recovery Storage Charge Q

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.

(1)

Cpk =

(2)

Max limit – Typ

= 25°C unless otherwise noted)

C

(VDS = 15 Vdc, VGS = 0 Vdc,

(VDS = 10 Vdc, ID = 1.2 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

(VDD = 10 Vdc, ID = 0.6 Adc,

VGS = 2.7 Vdc, RG = 6 Ω) (1)

(VDS = 16 Vdc, ID = 1.2 Adc,

(IS = 1.2 Adc, VGS = 0 Vdc) (1)

(IS = 1.2 Adc, VGS = 0 Vdc, TJ = 125°C)

3 x SIGMA

f = 1.0 MHz

VGS = 4.5 Vdc) (1)

(IS = 1.2 Adc, VGS = 0 Vdc,

dI

/dt = 100 A/µs) (1

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

f

t

d(on)

t

r

t

d(off)

f

Q
Q
Q
Q

V

SD

t

rr

t

a

t

b

RR

20
—

—
—

— — 100 nAdc

0.7
—

—
—

1.3 2.0 — Mhos

— 225 — pF
— 150 —
— 60 —

— 15 — ns
— 27 —
— 60 —
— 72 —
— 20 — ns
— 94 —
— 49 —
— 76 —

T
1
2
3

— 5.3 7.5 nC
— 0.7 —
— 2.6 —
— 1.9 —

—
—

— 86 —
— 27 —
— 59 —
— 0.115 — µC

—
14

—
—

0.95

2.2

146
220

0.89

0.72

—
—

1.0
10

1.4
—

175
280

1.1
—

Vdc

mV/°C

µAdc

Vdc

mV/°C

mΩ

Vdc

ns

Motorola TMOS Power MOSFET Transistor Device Data

3

MTDF1P02HD

TYPICAL ELECTRICAL CHARACTERISTICS

4.0

3.0

2.0

1.0

, DRAIN CURRENT (AMPS)

D

I

0

0.4

0.3

0.2

VGS = 8

4.5 V

3.7 V

3.3 V

0.80.4 1.2 1.6 3.01.0 2.0

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

3.1 V

2.9 V

2.7 V

2.5 V

2.3 V

2.1 V

1.9 V

1.7 V

TJ = 25°C

2.00

4.0
VDS ≥ 10 V

3.0

2.0

1.0

D

I

100°C

0

VGS, GATE–T O–SOURCE VOLT AGE (VOLTS)

25°C

TJ = –55°C

Figure 3. On–Region Characteristics Figure 4. Transfer Characteristics

0.6

ID = 1.6 A
TJ = 25

°

C

TJ = 25°C

0.5

0.4

2.7 V

0.3

4.00

0.1

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

(W)

0

DS(on)

R

0.2

0.1

, DRAIN–TO–SOURCE RESIST ANCE (OHMS)

0

0

2.0 4.0 6.0 8.0 10 3.0 4.0
VGS, GATE–T O–SOURCE (VOLTS)

DS(on)

R

1.00
ID, DRAIN CURRENT (AMPS)

VGS = 4.5 V

2.0

Figure 5. On–Resistance versus Drain Current Figure 6. On–Resistance versus Drain Current

and Gate Voltage

2.0
VGS = 4.5 V

ID = 0.8 A

1.5

1.0

(NORMALIZED)

0.5

, DRAIN–TO–SOURCE RESIST ANCER

DS(on)

0

–25 25–50

TJ, JUNCTION TEMPERATURE (

50 10075 8.0 12 20

°

125 150

C)

100

10

, LEAKAGE (nA) , DRAIN CURRENT (AMPS)

1.0

DSS

I

0.1

TJ = 125°C

100°C

25°C

4.00

VDS, DRAIN–TO–SOURCE VOL TAGE (VOLTS)

VGS = 0 V

160

Figure 7. On–Resistance Variation with

T emperature

4

Figure 8. Drain–to–Source Leakage Current

versus V oltage

Motorola TMOS Power MOSFET Transistor Device Data