Motorola MTD6N15 Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This TMOS Power FET is designed for high speed, low loss
power switching applications such as switching regulators, converters, solenoid and relay drivers.
• Silicon Gate for Fast Switching Speeds
• Low R
DS(on)
— 0.3 Ω Max
• Rugged — SOA is Power Dissipation Limited
• Source–to–Drain Diode Characterized for Use With
Inductive Loads
• Low Drive Requirement — V
GS(th)
= 4.0 V Max
• Surface Mount Package on 16 mm Tape
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
DSS
150 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) V
DGR
150 Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 50 µs)
V
GS
V
GSM
± 20
± 40
Vdc
Vpk
Drain Current — Continuous
Drain Current — Pulsed
I
D
I
DM
6.0
20
Adc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
P
D
20
0.16
Watts
W/°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
P
D
1.25
0.01
Watts
W/°C
Total Power Dissipation @ TA = 25°C (1)
Derate above 25°C
P
D
1.75
0.014
Watts
W/°C
Operating and Storage Junction Temperature Range TJ, T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
R
θJC
R
θJA
R
θJA
6.25
100
71.4
°C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V
(BR)DSS
150 — Vdc
Zero Gate Voltage Drain Current
(VDS = Rated V
DSS
, VGS = 0 Vdc)
TJ = 125°C
I
DSS
—
—
10
100
µAdc
(1) These ratings are applicable when surface mounted on the minimum pad size recommended. (continued)
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics—are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MTD6N15/D
SEMICONDUCTOR TECHNICAL DATA
CASE 369A–13, Style 2
DPAK (TO–252)
TMOS POWER FET
6.0 AMPERES
150 VOLTS
R
DS(on)
= 0.3 OHM
D
S
G
Motorola, Inc. 1996
MTD6N15
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS — continued
Gate–Body Leakage Current, Forward (V
GSF
= 20 Vdc, VDS = 0) I
GSSF
— 100 nAdc
Gate–Body Leakage Current, Reverse (V
GSR
= 20 Vdc, VDS = 0) I
GSSR
— 100 nAdc
ON CHARACTERISTICS*
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc)
TJ = 100°C
V
GS(th)
2.0
1.5
4.5
4.0
Vdc
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 3.0 Adc) R
DS(on)
— 0.3 Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 6.0 Adc)
(ID = 3.0 Adc, TJ = 100°C)
V
DS(on)
—
—
1.8
1.5
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 3.0 Adc) g
FS
2.5 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 1200 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 500
Reverse Transfer Capacitance
See Figure 11
C
rss
— 120
SWITCHING CHARACTERISTICS* (TJ = 100°C)
Turn–On Delay Time
t
d(on)
— 50 ns
Rise Time
t
r
— 180
Turn–Off Delay Time
RG = 50 Ω)
See Figures 13 and 14
t
d(off)
— 200
Fall Time t
f
— 100
Total Gate Charge
Q
g
15 (Typ) 30 nC
Gate–Source Charge
(VDS = 0.8 Rated V
DSS
,
ID = Rated ID, VGS = 10 Vdc)
Q
gs
8.0 (Typ) —
Gate–Drain Charge
See Figure 12
Q
gd
7.0 (Typ) —
SOURCE–DRAIN DIODE CHARACTERISTICS*
Forward On–Voltage
V
SD
1.3 (Typ) 2.0 Vdc
Forward Turn–On Time
(IS = 6.0 Adc, di/dt = 25 A/µs
V
= 0 Vdc,)
t
on
Limited by stray inductance
Reverse Recovery Time
VGS = 0 Vdc,)
t
rr
325 (Typ) — ns
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
T, TEMPERATURE (°C)
Figure 1. Power Derating
P
D
, POWER DISSIPATION (WATTS)
25
20
15
10
5
0
150125100755025
2.5
2
1.5
1
0.5
0
TAT
C
T
C
(VDD = 25 Vdc, ID = 3.0 Adc,
MTD6N15
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
2
1.6
1.2
0.8
0.4
0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
TJ = 25°C
24
20
16
12
8
4
0
6050403020100
10 V
9 V
8 V
7 V
6 V
5 V
VDS = V
GS
ID = 1 mA
–50 0 50 100 150
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 3. Gate–Threshold Voltage Variation
With Temperature
V
GS(th)
, GATE THRESHOLD VOLTAGE (VOLTS)
3.6
3.2
2.8
2.4
2
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
VDS = 10 V
TJ = 25°C
–55°C
100°C
14
12
10
8
6
4
2
0
4 6 8 10
2
1.6
1.2
0.8
0.4
0
–50 0 50 100 150 200
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. Breakdown Voltage Variation
With Temperature
V
(BR)DSS
, DRAIN–TO–SOURCE BREAKDOWN VOLTAGE
(NORMALIZED)
VGS = 0 V
ID = 0.25 mA
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
VGS = 10 V
0.30
0.25
0.20
0.15
0.10
0.05
0
201612840
TJ = 100°C
25°C
–55°C
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. On–Resistance Variation
With Temperature
VGS = 10 V
ID = 3 A
–50 0 50 100 150 200
Loading...