1
Motorola TMOS Power MOSFET Transistor Device Data
P–Channel Enhancement–Mode Silicon Gate
This a dvanced h igh voltage TMOS E–FET is designed to
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high s peed
switching applications such a s power supplies, P WM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional s afety margin against
unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated
Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External
Zener Transient Suppressor–Absorbs High Energy in the
Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–to–Source Voltage V
DSS
500 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) V
DGR
500 Vdc
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage — Single Pulse (tp ≤ 50 µs)
V
GS
V
GSM
±20
±40
Vdc
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
1.0
0.8
4.0
Adc
Apk
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TC = 25°C, when mounted to minimum recommended pad size
P
D
50
0.4
1.75
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (T
J
< 150°C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 10 mH, RG = 25 Ω)
E
AS
45 mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
R
θJC
R
θJA
R
θJA
2.5
100
71.4
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.