Motorola MTD1N60E Datasheet
1
Motorola TMOS Power MOSFET Transistor Device Data
!
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
• Robust High Voltage Termination
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain–Source Voltage V
DSS
600 Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ) V
DGR
600 Vdc
Gate–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
V
GS
V
GSM
±20
±40
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
I
D
I
D
I
DM
1.0
0.8
3.0
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size
P
D
40
0.32
1.75
Watts
W/°C
Watts
Operating and Storage Temperature Range TJ, T
stg
–55 to 150 °C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 10 mH, RG = 25 Ω)
E
AS
45 mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
— Junction to Ambient, when mounted to minimum recommended pad size
R
θJC
R
θJA
R
θJA
3.13
100
71.4
°C/W
Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTD1N60E/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
TMOS POWER FET
1.0 AMPERE
600 VOLTS
R
DS(on)
= 8.0 OHM
Motorola Preferred Device
D
S
G
CASE 369A–13, Style 2
DPAK
MTD1N60E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
600
—
—
720
—
—
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
(VDS = 600 Vdc, VGS = 0 Vdc, TJ = 125°C)
I
DSS
—
—
—
—
10
100
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0) I
GSS
— — 100 nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
—
3.2
6.0
4.0
—
Vdc
mV/°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc) R
DS(on)
— 5.9 8.0 Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 1.0 Adc)
(ID = 0.5 Adc, TJ = 125°C)
V
DS(on)
—
—
—
—
9.6
8.4
Vdc
Forward Transconductance (VDS = 15 Vdc, ID = 0.5 Adc) g
FS
0.5 0.8 — mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
— 224 310 pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
C
oss
— 27 40
Reverse Transfer Capacitance
f = 1.0 MHz)
C
rss
— 6.0 10
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
t
d(on)
— 8.8 20 ns
Rise Time
t
r
— 6.8 14
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
t
d(off)
— 15 30
Fall Time
G
= 9.1 Ω)
t
f
— 20 40
Q
T
— 7.1 11 nC
(See Figure 8)
DS
= 400 Vdc, ID = 1.0 Adc,
Q
1
— 1.7 —
(VDS = 400 Vdc, ID = 1.0 Adc,
VGS = 10 Vdc)
Q
2
— 3.2 —
Q
3
— 3.9 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 1.0 Adc, VGS = 0 Vdc)
(IS = 1.0 Adc, VGS = 0 Vdc, TJ = 125°C)
V
SD
—
—
0.82
0.7
1.4
—
Vdc
t
rr
— 464 —
(See Figure 14)
S
= 1.0 Adc, VGS = 0 Vdc,
t
a
— 36 —
(IS = 1.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
t
b
— 428 —
Reverse Recovery Stored Charge Q
RR
— 0.629 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
L
D
—
—
3.5
4.5
—
—
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
L
S
— 7.5 — nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
Gate Charge
Reverse Recovery Time
(VDD = 300 Vdc, ID = 1.0 Adc,
(V
(I
ns
MTD1N60E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 4 8 12 16 20
0
0.8
1.2
1.6
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I
D
, DRAIN CURRENT (AMPS)
2 2.8 3.6 4.4 5.2 6.8
0
0.4
1.2
2
I
D
, DRAIN CURRENT (AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0 0.2 0.6 1 1.6 2
0
4
8
12
16
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE (OHMS)
0 0.2 0.6 1 1.4 2
5
6
7
8
9
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
0.4
1.2
2.4
0 100 200 300 400 600
1
10
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
DSS
, LEAKAGE (nA)
TJ = 25°C
VDS ≥ 10 V
TJ = –55°C
100°C
TJ = 100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
VGS = 10 V
ID = 0.5 A
18
6 V
5 V
1.6
0.8
1.8
1.4
1
0.6
2.4 3.2 4 4.8 5.6
25°C
–55°C
2
0.4 0.8 1.4
1.2
8.5
7.5
6.5
5.5
0.4 0.8 1.2
VGS = 10 V
15 V
–50 –25 0 5025 75 100 125 150
TJ = 125°C
25°C
100°C
0.4
0.2
2 6 10 14 6 6.4
6
10
14
1.8 1.6 1.8
2
1.6
0.8
500
25°C
VGS = 10 V
7 V
R
DS(on)
, DRAIN–TO–SOURCE RESISTANCE
(NORMALIZED)
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