Motorola MTB9N25E Datasheet

1

Motorola TMOS Power MOSFET Transistor Device Data

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

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N–Channel Enhancement–Mode Silicon Gate

The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower R

DS(on)

capabilities. This advanced
TMOS E –FET i s designed t o withstand h igh e nergy i n the
avalanche and commutation modes. The new energy efficient
design also offers a drain–to–source diode with a fast recovery
time. Designed for low voltage, high speed switching applications in
power supplies, converters and PWM motor controls, these
devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional safety margin against unexpected voltage transients.

• Robust High Voltage Termination

• Avalanche Energy Specified

• Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• I

DSS

and V

DS(on)

Specified at Elevated Temperature

• Short Heatsink Tab Manufactured — Not Sheared

• Specially Designed Leadframe for Maximum Power Dissipation

• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4

Suffix to Part Number

MAXIMUM RATINGS

(TC = 25°C unless otherwise noted)

Rating

Symbol Value Unit

Drain–to–Source Voltage V

DSS

250 Vdc

Drain–to–Gate Voltage (RGS = 1.0 MΩ) V

DGR

250 Vdc

Gate–to–Source Voltage — Continuous

— Non–Repetitive (tp ≤ 10 ms)

V

GS

V

GSM

± 20
± 40

Vdc
Vpk

Drain Current — Continuous

— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)

I

D

I

D

I

DM

9.0

5.7
32

Adc

Apk

Total Power Dissipation @ 25°C

Derate above 25°C

Total Power Dissipation @ TA = 25°C

(1)

P

D

80

0.64

2.5

Watts

W/°C

Watts

Operating and Storage Temperature Range TJ, T

stg

– 55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 80 Vdc, VGS = 10 Vdc, Peak IL = 9.0 Apk, L = 3.0 mH, RG = 25 Ω)

E

AS

122

mJ

Thermal Resistance — Junction to Case

— Junction to Ambient
— Junction to Ambient

(1)

R

θJC

R

θJA

R

θJA

1.56

62.5
50

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T

L

260 °C

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MTB9N25E/D



SEMICONDUCTOR TECHNICAL DATA



TMOS POWER FET

9.0 AMPERES
250 VOLTS

R

DS(on)

= 0.45 OHM

Motorola Preferred Device

CASE 418B–02, Style 2

D2PAK

D

S

G



 Motorola, Inc. 1995

MTB9N25E

2

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS

(TJ = 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)

V

(BR)DSS

250

—

—

328

—
—

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 250 Vdc, VGS = 0 Vdc)
(VDS = 250 Vdc, VGS = 0 Vdc, TJ = 125°C)

I

DSS

—
—

—
—

10

100

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) I

GSS

— — 100 nAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)

V

GS(th)

2.0
—

3.0

7.0

4.0
—

Vdc

mV/°C

Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 4.5 Adc) R

DS(on)

— 0.37 0.45 Ohm

Drain–to–Source On–Voltage

(VGS = 10 Vdc, ID = 9.0 Adc)
(VGS = 10 Vdc, ID = 4.5 Adc, TJ = 125°C)

V

DS(on)

—
—

3.5
—

5.4

4.7

Vdc

Forward Transconductance (VDS = 15 Vdc, ID = 4.5 Adc) g

FS

3.0 5.2 — mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

— 783 1100 pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

C

oss

— 144 200

Transfer Capacitance

f = 1.0 MHz)

C

rss

— 32 65

SWITCHING CHARACTERISTICS (2)

Turn–On Delay Time

t

d(on)

— 10 20 ns

Rise Time

t

r

— 36 70

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 9.1 Ω)

t

d(off)

— 27 55

Fall Time

G

= 9.1 Ω)

t

f

— 26 50

Q

T

— 26 40 nC

(See Figure 8)

DS

= 200 Vdc, ID = 9.0 Adc,

Q

1

— 4.8 —

(VDS = 200 Vdc, ID = 9.0 Adc,

VGS = 10 Vdc)

Q

2

— 12.7 —

Q

3

— 9.2 —

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (1)

(IS = 9.0 Adc, VGS = 0 Vdc )

(IS = 9.0 Adc, VGS = 0 Vdc , TJ = 125°C)

V

SD

—
—

0.9

0.81

1.5
—

Vdc

t

rr

— 191 — ns

(See Figure 14)

S

= 9.0 Adc, VGS = 0 Vdc,

t

a

— 126 —

(IS = 9.0 Adc, VGS = 0 Vdc,

dlS/dt = 100 A/µs)

t

b

— 65 —

Reverse Recovery Stored Charge Q

RR

— 1.387 — µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from the drain lead 0.25″ from package to center of die)

L

D

— 4.5 —

nH

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

L

S

— 7.5 —

nH

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.

Gate Charge

Reverse Recovery Time

(VDD = 125 Vdc, ID = 9.0 Adc,

(V

(I

MTB9N25E

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On–Resistance versus Drain Current

and Temperature

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

Figure 5. On–Resistance Variation with

Temperature

Figure 6. Drain–To–Source Leakage

Current versus Voltage

0 2 4 6 8 10

9

15

18

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

I

D

, DRAIN CURRENT (AMPS)

I

D

, DRAIN CURRENT (AMPS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

TJ = 25°C

VDS ≥ 10 V TJ = –55°C

100°C

6

12

3

5 V

6 V

7 V

VGS = 10 V

2 3 4 5 6 7

0

9

15

18

6

12

3

0

25°C

8 V

12

9 V

8

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE (OHMS)

0 3 6 9 12 15

0

0.2

0.4

0.8

1.2

ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

TJ = 100°C

25°C

–55°C

TJ = 25°C

VGS = 10 V

1.0

0.6

18

0.3

0.4

0.5

0.6

0 3 6 9 12 15 18

15 V

VGS = 10 V

R

DS(on)

, DRAIN–TO–SOURCE RESISTANCE

(NORMALIZED)

–50

0

0.5

1.0

1.5

2.0

0 100 200

1

10

100

TJ, JUNCTION TEMPERATURE (

°

C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

I

DSS

, LEAKAGE (nA)

–25 0 25 50 75 100 125 150

VGS = 0 V

50 150 250

TJ = 125°C

25°C

100°C

VGS = 10 V
ID = 4.5 A

2.5

1000

0.1