Motorola MRF653 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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by MRF653/D

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Designed for 12.5 Volt UHF large–signal amplifier applications in industrial

and commercial FM equipment operating to 512 MHz.

• Specified 12.5 Volt, 512 MHz Characteristics
Output Power = 10 W
Gain = 8.0 dB (Typ)
Efficiency = 65% (Typ)

• Gold Metallized, Emitter Ballasted for Long Life and Reliability

• Capable of 20:1 VSWR Load Mismatch at 16 V Supply Voltage

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TA = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

CEO
CBO
EBO

C

P

D

stg

J

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage (IC = 20 mAdc, IB = 0) V
Collector–Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0) I

ON CHARACTERISTICS

DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) h

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) C

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, P
Collector Efficiency

(VCC = 12.5 Vdc, P
Load Mismatch Stress

(VCC = 16 Vdc, f = 512 MHz, Pin (1) = 2.6 W,

VSWR = 20:1, All Phase Angles)

NOTE:

1. Pin = 2.0 dB over the typical input power required for 10 W output power @ 12.5 Vdc.

REV 8

= 10 W, f = 512 MHz)

out

= 10 W, f = 512 MHz)

out

16.5 Vdc
38 Vdc

4.0 Vdc

2.75 Adc
44

0.25

–65 to +150 °C

200 °C

Watts

W/°C

Symbol Min Typ Max Unit

(BR)CEO
(BR)CES
(BR)EBO

CES

FE

ob

G

pe

η

c

ψ

θJC



10 W, 512 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 244–04, STYLE 1

4.0 °C/W

16.5 — — Vdc
38 — — Vdc

4.0 — — Vdc
— — 5.0 mAdc

20 — 120 —

— 22 28 pF

7.0 8.0 — dB

55 65 — %

No Degradation in Output Power

 Motorola, Inc. 1997

MRF653MOTOROLA RF DEVICE DATA

1

JP1

L1 L4

+

C7 C8 C9

L2 L3

SOCKET

C3

D.U.T.

C10

BB

C11 C12

+

+

V

CC

–

C2

C1

C1, C5 — 1.0–20 pF, Johanson
C2, C6 — 330 pF, 100 Mil ATC
C3, C4 — 36 pF, Mini–Unelco
C7, C12 — 10 µF, 35 V, Tantalum
C8, C11 — 0.1 µF, Ceramic
C9, C10 — 91 pF, Mini–Unelco

Z2Z1 Z4 Z5

C4

L1, L4 — 4–1/2 Turns, #18 AWG, 0.16″ ID
L2, L3 — 2 Turns, #18 AWG, 0.16″ ID
B — Ferrite Bead, Ferroxcube 56–590–65–3B
Z1 — 51 x 630 mils
Z2 — 162 x 1300 mils
Z3 — 210 x 1350 mils
Z4 — 210 x 280 mils
Z5 — 51 x 300 mils
Board Material — 0.032″ epoxy glass G10, 1 oz., copper clad,

Board Material — double sided, εr = 5

JP1 — Jumper, #14 AWG w/Banana Plugs

Z3

C6

C5

Figure 1. Broadband T est Circuit Schematic

MRF653
2

MOTOROLA RF DEVICE DATA