Motorola MRF652S, MRF652 Datasheet

1

MRF652 MRF652SMOTOROLA RF DEVICE DATA

The RF Line

 
  

Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial

and commercial FM equipment operating to 512 MHz.

• Guaranteed 12.5 Volt, 512 MHz Characteristics
Output Power = 5.0 Watts
Minimum Gain = 10 dB
Efficiency = 65% (Typ)

• Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB

• Series Equivalent Large–Signal Characterization

• Gold Metallized, Emitter Ballasted for Long Life and Reliability

• Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

16 Vdc

Collector–Base Voltage V

CBO

36 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

2.0 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

25

143

Watts

mW/°C

Storage Temperature Range T

stg

–65 to +150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

7.0 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 25 mAdc, IB = 0)

V

(BR)CEO

16 — — Vdc

Collector–Emitter Breakdown Voltage

(IC = 25 mAdc, VBE = 0)

V

(BR)CES

36 — — Vdc

Collector–Base Breakdown Voltage

(IC = 25 mAdc, IE = 0)

V

(BR)CBO

36 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0)

I

CES

— — 1.0 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 200 mAdc, VCE = 5.0 Vdc)

h

FE

10 — 150 —

(continued)

Order this document

by MRF652/D



SEMICONDUCTOR TECHNICAL DATA





5.0 W, 512 MHz
RF POWER

TRANSISTORS

NPN SILICON

CASE 244–04, STYLE 1

MRF652

CASE 249–06, STYLE 1

MRF652S

 Motorola, Inc. 1995

REV 7

MRF652 MRF652S
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) C

ob

— 9.5 15 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain f = 512 MHz

(VCC = 12.5 Vdc, P

out

= 5.0 W) f = 870 MHz

G

pe

10
—

11

6.0

—
—

dB

Collector Efficiency

(VCC = 12.5 Vdc, P

out

= 5.0 W, f = 512 MHz)

η 60 65 — %

Load Mismatch

(VCC = 15.5 Vdc, Pin = 500 mW, f = 512 MHz,
VSWR = 30:1, At All Phase Angles)

ψ

No Degradation in Output Power

Figure 1. 440–512 MHz Broadband Test Circuit

B1, B2, B3 — Ferrite Bead
C1 — 7.0 pF Unelco Mica
C2 — 1.0–6.0 pF Johanson Variable 5201
C3 — 15 pF Unelco Mica
C4 — 43 pF Mini–Underwood Mica
C5 — 56 pF Mini–Underwood Mica
C6 — 1000 pF Unelco Mica
C7 — 0.1 µF Ceramic

C8 — 68 pF Mini–Underwood Mica
C9 — 1.0 µF Electrolytic 25 V
C10, C11 — 5.0 pF Unelco Mica
C12 — 1.0–10 pF Johanson Variable 5501
L1, L2 — 6 Turns, 20 AWG Wire 0.125″ ID
Z1, Z2 — 25 Ohm µStripline
Z3, Z4, Z5 — 50 Ohm µStripline
Board — 0.032″ Glass–Teflon

D.U.T.

C4

C6 C7 C9

+

GRD

Z5Z4Z3Z2Z1

C8

C1 C2 C3 C5

C10 C11 C12

L1

B1

L2

B3B2

+12.5 Vdc

–