Motorola MRF650 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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  

Designed for 12.5 Volt UHF large–signal amplifier applications in industrial

and commercial FM equipment operating to 520 MHz.

• Guaranteed 440, 470, 512 MHz 12.5 Volt Characteristics
Output Power = 50 Watts
Minimum Gain = 5.2 dB @ 440, 470 MHz
Efficiency = 55% @ 440, 470 MHz
IRL = 10 dB

• Characterized with Series Equivalent Large–Signal Impedance Parameters

from 400 to 520 MHz

• Built–In Matching Network for Broadband Operation

• Triple Ion Implanted for More Consistent Characteristics

• Implanted Emitter Ballast Resistors

• Silicon Nitride Passivated

• 100% Tested for Load Mismatch Stress at all Phase Angles with 20:1

VSWR @ 15.5 Vdc, 2.0 dB Overdrive

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

Order this document

by MRF650/D



50 W, 512 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 316–01, STYLE 1

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage (IC = 50 mAdc, IB = 0) V
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) I

(BR)CEO
(BR)CES
(BR)EBO

CES

ON CHARACTERISTICS

DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) h

FE

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) C

REV 8

ob

CEO
CES
EBO

C

P

D

stg

J

θJC

16.5 — — Vdc
38 — — Vdc

4.0 — — Vdc
— — 5.0 mAdc

20 70 120 —

— 135 170 pF

16.5 Vdc
38 Vdc

4.0 Vdc
12 Adc

135

0.77

–65 to +150 °C

200 °C

1.3 °C/W

Watts

W/°C

(continued)

 Motorola, Inc. 1997

MRF650MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted)

C

FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.)

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, P

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, P

Input Return Loss

(VCC = 12.5 Vdc, P

Collector Efficiency

(VCC = 12.5 Vdc, P

Collector Efficiency

(VCC = 12.5 Vdc, P

Output Mismatch Stress

(VCC = 15.5 V, 2.0 dB Overdrive, f = 470 MHz,
VSWR = 20:1, All Phase Angles) (1)

NOTES:

1. Pin = 2.0 dB above drive requirement for 50 W output at 12.5 Vdc.

2. ψ = Mismatch stress factor — the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress
test is accomplished in the standard test fixture (Figure 1) terminated in a 20:1 minimum load mismatch at all phase angles.

= 50 W, f = 440, 470 MHz)

out

= 50 W, f = 512 MHz)

out

= 50 W, f = 440, 470, 512 MHz)

out

= 50 W, f = 440, 470 MHz)

out

= 50 W, f = 512 MHz)

out

G

pe

G

pe

IRL 10 15 — dB

η 55 65 — %

— 50 60 — %

ψ (2)

5.2 6.1 — dB

5.0 5.9 — dB

No Degradation in Output Power

R1

∆

V

RE

PORT

RF INPUT

50

Ω

B1, B8 — Ferrite Bead Ferroxcube VK200 20–4B
B2, B3, B4, B5, B6, B7 — Ferrite Bead Ferroxcube #56–590–3B

C1, C8 — 10 µF, 25 V , 25%, Electrolytic, ECS TE–1204
C2, C7 — 1000 pF, Chip Cap, 5%, ATC 100B102JC50
C3, C6 — 91 pF, 5%, Mica, SAHA 3HS0006–91
C4, C5, C12, C13 — 36 pF, 5%, SAHA 3HS0006–36
C9, C16 — 220 pF, Chip Cap, 5%, ATC 100B221JC200
C10, C11, C15 — 0.8–10 pF, Variable, Johanson JMC501 PG26J200
C14 — 1.0–20 pF, Variable, Johanson JMC5501 PG26J200

L1, L2 — 3 Turns, 18 AWG, 0.19″ ID — Total Length 3.5″
N1, N2 — N Coaxial Conn., Omni–Spectra 3052–1648–10
R1, R2 — 10 Ohm, 10%, 1.0 W, Carbon, RCA 831010

TL1

N1

TL2

B1 B2 B3

+

C1 C2 C3 B4

L1

TL3 TL4 TL5 TL6

C9

C10

C11

SOCKET

C4 C5

D.U.T.

C12 C13

Figure 1. 440 to 512 MHz Broadband T est Circuit Schematic

R2

B6 B7 B8

B5

L2

C6 C7

C16

C14 C15

TL1, TL12 — Zo = 50 Ohm
TL2 — See Photomaster
TL3 — See Photomaster
TL4 — See Photomaster
TL5 — See Photomaster
TL6 — See Photomaster
TL7 — See Photomaster
TL8 — See Photomaster
TL9 — See Photomaster
TL10 — See Photomaster
TL11 — See Photomaster

Transmission Line Boards: 1/16″ Glass–Teflon

Transmission Line Boards: Keene GX–0600–55–22
Transmission Line Boards: 2 oz. Cu Clad Both Sides
Transmission Line Boards: εr = 2.55

Bias Boards: 1/16″ G10 or Equivalent

Bias Boards: 2 oz. Cu Clad Double Sided

TL11

C8

+12.5 Vdc

+

TL12TL7 TL8 TL9 TL10

RF

OUTPUT

50

N2

Ω

MRF650
2

MOTOROLA RF DEVICE DATA