Motorola MRF6409 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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The MRF6409 is designed for GSM base stations applications. It incorpo­rates high value emitter ballast resistors, gold metallizations and offers a high
degree of reliability and ruggedness.

• To be used in Class AB

• Specified 26 Volts, 960 MHz Characteristics

Output Power — 20 Watts CW
Gain — 1 1 dB Typ
Efficiency — 60% Typ

Order this document

by MRF6409/D



20 W, 960 MHz

RF POWER TRANSISTOR

NPN SILICON

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector–Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (1) R

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage

(IC = 20 mAdc, IB = 0)
Emitter–Base Breakdown Voltage

(IB = 5.0 mAdc, IC =0)
Collector–Emitter Breakdown Voltage

(IC = 20 mAdc, VBE = 0)
Collector–Cutoff Current

(VCE = 30 Vdc, VBE = 0)

(1) Thermal resistance is determined under specified RF operating condition.

V

(BR)CEO

V

(BR)EBO

V

(BR)CES

I

CES

CASE 319–07, STYLE 2

CEO
CES
EBO

C

P

D

stg

J

θJC

24 30 — Vdc

4.0 5.0 — Vdc

55 60 — Vdc

— — 6.0 mA

24 Vdc
55 Vdc

4.0 Vdc

5.0 Adc
45

0.26

–65 to +150 °C

200 °C

3.8 °C/W

Watts

W/°C

 Motorola, Inc. 1997

MRF6409MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic

ON CHARACTERISTICS

DC Current Gain

(ICE = 1.0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 26 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 26 Vdc, P

Collector Efficiency

(VCC = 26 Vdc, P

Load Mismatch

(VCC = 26 Vdc, P
Load VSWR = 3:1, All Phase Angles at Frequency of Test)

C8

= 20 W (CW), ICQ = 50 mA, f = 960 MHz)

out

= 20 W (CW), ICQ = 50 mA, f = 960 MHz)

out

= 15 W (CW), ICQ = 50 mA, f = 960 MHz,

out

R2

= 25°C unless otherwise noted)

C

Symbol Min Typ Max Unit

h

FE

C

ob

G

pe

η 50 60 — %

Ψ

T1

20 35 80 —

— 18 — pF

10 11 — dB

No Degradation in Output Power

+

5.0 V

–

RF INPUT

C7

C6

R1

B1

C1

B1, B2 Ferrite Bead
C1 3.3 pF, Chip Capacitor, High Q
C2, C3 4.7 pF, Chip Capacitor, High Q
C4 2.2 pF, Chip Capacitor, High Q
C5 82 pF, Chip Capacitor, High Q
C6, C9 330 pF, Chip Capacitor, High Q
C7, C10 0.1 µF, Chip Capacitor
C8 22 µF, 16 V, Tantalum Capacitor

D2
D1

R3

P1

D.U.T.

C11 4.7 µF, 50 V, Tantalum Capacitor
D1, D2 Diode BAS16 Type or Equivalent
P1 1.0 kΩ, Trimmer
R1 3.3 Ω, Chip Resistor
R2 68 Ω, Chip Resistor
R3 2.2 kΩ, Resistor
T1 NPN Transistor
Board Glass Teflon, εr = 2.55, H = 1/50 inch

Figure 1. T est Circuit Electrical Schematic

C9

C3

C2 C4

B2

C5

C10

C11

RF OUTPUT

+
26 V

–

MRF6409
2

MOTOROLA RF DEVICE DATA