Motorola MRF6408 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed for PCN and PCS base station applications, the MRF6408
incorporates high value emitter ballast resistors, gold metallizations and offers
a high degree of reliability and ruggedness.
• To be used in class AB for PCN–PCS / Cellular Radio
• Specified 26 Volts, 1.88 GHz Characteristics
Output Power = 12 Watts CW
Typical Gain = 8.8 dB
Typical Efficiency = 42%
• Specified 26 Volts, 1.99 GHz Characteristics
Output Power = 12 Watts CW
Typical Gain = 8.3 dB
Typical Efficiency = 39%
• Circuit Board Photomaster Available by Ordering Document
MRF6408PHT/D from Motorola Literature Distribution.
Order this document
by MRF6408/D
12 W, 2.0 GHz
RF POWER TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector–Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (1) R
ELECTRICAL CHARACTERISTICS (T
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Emitter–Base Breakdown Voltage
(IB = 5.0 mAdc, IC = 0)
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
(1) Thermal resistance is determined under specified RF operating condition.
= 25°C unless otherwise noted)
C
V
V
V
Symbol Min Typ Max Unit
(BR)CEO
(BR)EBO
(BR)CES
I
CES
CASE 395C–01, STYLE 1
CEO
CES
EBO
C
P
D
stg
J
θJC
24 30 — Vdc
4 5 — Vdc
55 64 — Vdc
— — 6 mA
24 Vdc
60 Vdc
4 Vdc
5 Adc
60
0.35
–65 to +150 °C
200 °C
2.8 °C/W
Watts
W/°C
REV 2
Motorola, Inc. 1997
MRF6408MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued (T
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(ICE = 1 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance (2)
(VCB = 26 Vdc, IE = 0, f = 1 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, P
Common–Emitter Amplifier Power Gain
(VCC = 26 Vdc, P
Collector Efficiency
(VCC = 26 Vdc, P
Collector Efficiency
(VCC = 26 Vdc, P
Output Power at 1 dB Compression Point
(VCC = 26 Vdc, ICQ = 100 mA, f = 1.88 GHz)
Output Power at 1 dB Compression Point
(VCC = 26 Vdc, ICQ = 100 mA, f = 1.99 GHz)
Intermodulation Distortion
(VCC = 26 Vdc, P
f1 = 1880 MHz, f2 = 1880.1 MHz)
Intermodulation Distortion
(VCC = 26 Vdc, P
f1 = 1990 MHz, f2 = 1990.1 MHz)
Load Mismatch
(VCC = 26 Vdc, P
Load VSWR = 3:1, All Phase Angles at Frequency of Test)
(2) For information only . This part is collector matched.
= 12 W (CW), ICQ = 100 mA, f = 1.88 GHz)
out
= 12 W (CW), ICQ = 100 mA, f = 1.99 GHz)
out
= 12 W (CW), ICQ = 100 mA, f = 1.88 GHz)
out
= 12 W (CW), ICQ = 100 mA, f = 1.99 GHz)
out
= 12 W (PEP), ICQ = 100 mA,
out
= 12 W (PEP), ICQ = 100 mA,
out
= 12 W (CW), ICQ = 100 mA, f = 1.99 GHz,
out
= 25°C unless otherwise noted)
C
h
FE
C
ob
G
pe
G
pe
η 37 42 — %
η 34 39 — %
P @ 1 dB 15 — — W
P @ 1 dB 14 — — W
IMD — –35 –30 dBc
IMD — –35 –30 dBc
ψ No Degradation in Output Power
20 35 80 —
— 18 — pF
7.8 8.8 — dB
7.5 8.3 — dB
MRF6408
2
MOTOROLA RF DEVICE DATA
C11
R2
C10
R3
T1T2P1
R4
V
CC
V
BB
C7
L1
Z1,
Θ
1
C9
C8
C1
RF
INPUT
C4
C5, C9
C7
C10, C12, C13
C11
L1
C12
R1
BASE BIAS CIRCUIT
Θ
Z4, 4
Z2,
Θ
2
Z5,
Θ
5
TRF1
Θ
B
CT1
47 pF, Chip Capacitor, ATC100A
330 pF, 0805 Chip Capacitor, Vitramon JXB
4.7 µF 63 V , Electrolytic Capacitor
15 nF, 0805 Chip Capacitor, Vitramon JXB
100 µF 16 V, Electrolytic Capacitor
SMD Ferrite Bead, Fair–Rite 2743021447
Z6,
Θ
RF CIRCUIT
C13
Θ
Z11, 11
6 Z7,Θ7 Z10,Θ10 Z12,Θ12Z8,Θ8
CT2 CT3
P1
R1
R2
R3
R4
T1, T2
1 kΩ, Trimmer Resistor
1 Ω, 1206 Chip Resistor
56 Ω, 1206 Chip Resistor
47 Ω, 0805 Chip Resistor
330 Ω, 0805 Chip Resistor
MJD31C, NPN Transistor, Motorola
C5
C4
C2
RF
OUTPUT
T est Circuits Bias and Decoupling Components List
C1, C2
CT1
CT2
CT3
Z1
Z2
Z4
Z5
Z6
Z7
Z8
Z10
Z11
Z12
33 pF, Chip Capacitor, ATC100A
Trimmer Capacitor, Gigatrim 37281
Trimmer Capacitor, Gigatrim 37281
Trimmer Capacitor, Gigatrim 37281
50 Ω Θ1 = 10°
50 Ω Θ2 = 74.5° ΘB = 16.5°
74 Ω Θ4 = 68°
12.8 Ω Θ5 = 21°
10.4 Ω Θ6 = 49.5°
18 Ω Θ7 = 36.5°
45 Ω Θ8 = 20°
50 Ω Θ10 = 10°
74 Ω Θ11 = 74.5°
50 Ω Θ12 = 10°
Electrical Lengths are referenced from IG @ f = 1.9 GHz
1.88 GHz Test Circuit RF Components List
Figure 1. T est Circuits Schematic
C1, C2
CT1
CT2
CT3
Z1
Z2
Z4
Z5
Z6
Z7
Z8
Z10
Z11
Z12
33 pF, Chip Capacitor, ATC100A
Trimmer Capacitor, Gigatrim 37281
Trimmer Capacitor, Gigatrim 37281
Not Used
50 Ω Θ1 = 10°
50 Ω Θ2 = 74.5° ΘB = 16.5°
74 Ω Θ4 = 68°
12.8 Ω Θ5 = 21°
10.4 Ω Θ6 = 49.5°
18 Ω Θ7 = 36.5°
45 Ω Θ8 = 20°
50 Ω Θ10 = 10°
74 Ω Θ11 = 60°
50 Ω Θ12 = 10°
1.99 GHz Test Circuit RF Components List
MRF6408MOTOROLA RF DEVICE DATA
3
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