Motorola MRF6404K, MRF6404 Datasheet
SEMICONDUCTOR TECHNICAL DATA
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by MRF6404/D
The RF Line
The MRF6404 is designed for 26 volts microwave large signal, common
emitter, class AB linear amplifier applications operating in the range 1.8 to
2.0 GHz.
• Specified 26 Volts, 1.88 GHz Characteristics
Output Power — 30 Watts
Gain — 7.5 dB Min @ 30 Watts
Efficiency — 38% Min @ 30 Watts
• Characterized with Series Equivalent Large–Signal Parameters from
1.8 to 2.0 GHz
• To be used in Class AB for DCS1800 and PCS1900/Cellular Radio
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Emitter Voltage V
Emitter–Base Voltage V
Collector–Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (1) R
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mA, IB = 0) V
Emitter–Base Breakdown Voltage (IE = 10 mAdc) V
Collector–Base Breakdown Voltage (IC = 50 mAdc) V
Collector–Base Breakdown Voltage (IC = 50 mAdc, RBE = 75 Ω) V
Collector Cutoff Current (VCE = 30 V, VBE = 0) I
ON CHARACTERISTICS
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) h
(1) Thermal resistance is determined under specified RF operating condition.
= 25°C unless otherwise noted)
C
(BR)CEO
(BR)EBO
(BR)CES
(BR)CER
CES
FE
30 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C–01, STYLE 1
CEO
CES
EBO
C
P
D
stg
J
θJC
24 29 — Vdc
4 5 — Vdc
60 68 — Vdc
40 56 — Vdc
— — 10 mA
20 50 120 —
24 Vdc
60 Vdc
4 Vdc
10 Adc
125
0.71
–65 to +150 °C
200 °C
1.4 °C/W
Watts
W/°C
REV 2
Motorola, Inc. 1996
MRF6404 MRF6404KMOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued (T
Characteristic
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 26 V, IE = 0, f = 1 MHz)
For information only. This part is collector matched.
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 26 V, P
Common–Emitter Amplifier Power Gain
(VCC = 26 V, P
(f = 1.99 GHz)
Collector Efficiency
(VCC = 26 V, P
(VCC = 26 V, P
Output Power at 1 dBc
(VCC = 26 V, f = 1.88 GHz)
(VCC = 26 V, f = 1.99 GHz)
Output Mismatch Stress: VSWR = 3:1 (all phase angles)
(VCC = 26 Vdc, P
= 30 W, ICQ = 150 mA, f = 1.88 GHz)
out
= 28 W, ICQ = 150 mA)
out
= 30 W, f = 1.88 GHz)
out
= 28 W, f = 1.99 GHz)
out
= 25 W, ICQ = 150 mA, f = 1.88 GHz)
out
= 25°C unless otherwise noted)
C
Symbol Min Typ Max Unit
C
ob
G
pe
G
pe
η
P
1dBc
Ψ
30 38 — pF
7.5 8.5 — dB
7 8 — dB
38
35
30
28
43
40
35
33
No Degradation in Output Power
—
—
—
—
Watts
%
1.9 GHz
ZOL*
f = 1.8 GHz
f = 1.8 GHz
1.9 GHz
Z
in
Zo = 20
DCS EVALUATION
f
Ω
(GHz)
1.8
1.85
1.9
ZOL*: Conjugate of optimum load impedance into
which the device operates at a given output
power, voltage, current and frequency.
Z
in
(Ω)
4.3 + j6.1
4.6 + j5.3
4.8 + j5.0
ZOL*
(Ω)
2.7 – j1.0
2.9 + j0.3
3.0 + j1.2
Figure 1. Input and Output Impedances with Circuit T uned for Maximum Gain
MRF6404 MRF6404K
2
@ VCC = 26 V, ICQ = 150 mA, P
out
= 30 W
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
40
VCC = 26 V
35
ICQ = 150 mA
30
25
20
15
, OUTPUT POWER (WATTS)
10
out
P
5
0
0
2
Pin, INPUT POWER (WATTS)
f = 1.7 GHz
4 6 1.851.75
Figure 2. Output Power versus Input Power
–25
–30
–35
–40
–45
–50
–55
IMD, INTERMODULATION DISTORTION (dBc)
–60
0
P
, OUTPUT POWER (WATTS) PEP
out
20 40
VCC = 26 V
ICQ= 150 mA
f = 1.88 & 1.8801 GHz
Figure 4. Intermodulation versus Output Power
1.9 GHz
1.8 GHz
3010
3rd Order
5th
7th
40
35
30
25
20
15
, OUTPUT POWER (WATTS)
10
out
P
5
0
1.70
VCC = 26 V
ICQ = 150 mA
Figure 3. Output Power versus Frequency
12
VCC = 26 V
9
ICQ = 150 mA
f = 1.88 GHz
6
3
0
PHASE (DEGREE)
–3
–6
–9
4
Pin = 5 W
3 W
1 W
1.80
f, FREQUENCY (GHz)
12 16
820
P
, OUTPUT POWER (WATTS)
out
3224
Figure 5. AM/PM Conversion
1.90135
400
3628
MRF6404 MRF6404KMOTOROLA RF DEVICE DATA
3
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