Motorola MRF587 Datasheet

1

MRF587MOTOROLA RF DEVICE DATA

The RF Line

 
 

. . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband
amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

• Low Noise Figure —
NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA

• High Power Gain —
G

U(max)

= 16.5 dB (Typ) @ f = 500 MHz

• Ion Implanted

• All Gold Metal System

• High fT — 5.5 GHz

• Low Intermodulation Distortion:

TB3 = –70 dB
DIN = 125 dB µV

• Nichrome Emitter Ballast Resistors

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

17 Vdc

Collector–Base Voltage V

CBO

34 Vdc

Emitter–Base Voltage V

EBO

2.5 Vdc

Collector Current — Continuous I

C

200 mAdc

Total Device Dissipation @ TC = 50°C

Derate above TC = 50°C

P

D

5.0
33

Watts

mW/°C

Storage Temperature Range T

stg

– 65 to +150 °C

Junction Temperature T

J

200 °C

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, IB = 0)

V

(BR)CEO

17 — — Vdc

Collector–Base Breakdown Voltage

(IC = 1.0 mAdc, IE = 0)

V

(BR)CBO

34 — — Vdc

Emitter–Base Breakdown Voltage

(IC = 0, IE = 0.1 mAdc)

V

(BR)EBO

2.5 — — Vdc

Collector Cutoff Current

(VCB = 10 Vdc, IE = 0)

I

CBO

— — 50 µAdc

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 50 mAdc, VCE = 5.0 Vdc)

h

FE

50 — 200 —

NOTE: (continued)

1. 300 µs pulse on Tektronix 576 or equivalent.

Order this document

by MRF587/D



SEMICONDUCTOR TECHNICAL DATA



NF = 3.0 dB @ 0.5 GHz

HIGH–FREQUENCY

TRANSISTOR
NPN SILICON

CASE 244A–01, STYLE 1

 Motorola, Inc. 1994

REV 6

MRF587
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (2)

(IC = 90 mAdc, VCE = 15 Vdc, f = 0.5 GHz)

f

T

— 5.5 — GHz

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

C

cb

— 1.7 2.2 pF

FUNCTIONAL TESTS

Narrowband — Figure 15

(IC = 90 mA, VCC = 15 V, f = 0.5 GHz)

Noise Figure
Power Gain at Optimum Noise Figure

NF

G

NF

—
11

3.0
13

4.0
—

dB

Broadband — Figure 16

(IC = 90 mA, VCC = 15 V, f = 0.3 GHz)

Noise Figure
Power Gain at Optimum Noise Figure

NF

G

NF

—
—

6.3
11

—
—

dB

Triple Beat Distortion

(IC = 50 mA, VCC = 15 V, P

Ref

= 50 dBmV)

(IC = 90 mA, VCC = 15 V, P

Ref

= 50 dBmV)

TB

3

— –70 — dB

DIN 45004

(IC = 90 mA, VCC = 15 V)
(IC = 90 mA, VCC = 15 V)

DIN — 125 — dBµV

Maximum Available Power Gain (3)

(IC = 90 mA, VCE = 15 Vdc, f = 0.5 GHz)

G

Umax

— 16.5 — dB

NOTES:

2. Characterized on HP8542 Automatic Network Analyzer

3. G

Umax

=

Figure 1. Typical Noise Figure and

Associated Gain versus Frequency

Figure 2. Noise Figure versus Collector Current

10

0.20.1
f, FREQUENCY (GHz)

0.3 0.5 0.7 10

G

NF

, GAIN AT NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

3
0

G

NF

VCE = 15 V
IC = 90 mA

9
8
7
6
5
4
3
2
1
0

0.9

6

9

12

15

18

21

24

27

30

500

IC, COLLECTOR CURRENT (mA)

NF, NOISE FIGURE (dB)

6

5

4

3

2

1

100 150 200

VCE = 15 V
f = 300 MHz

N.F.

|S

21

|

2

(1

–

|S11|2)(1–|S

22

|2)

3

MRF587MOTOROLA RF DEVICE DATA

Figure 3. G

Umax

versus Collector Current Figure 4. Gain–Bandwidth Product versus

Collector Current

f , GAIN-BANDWIDTH PRODUCT (GHz)

T

500

IC, COLLECTOR CURRENT (mA)

6

5

4

3

2

1

100 150 200500

IC, COLLECTOR CURRENT (mA)

20

100 150 200

16

12

8

4

0

G

Umax

, MAXIMUM AVAILABLE POWER GAIN (dB)

f = 500 MHz
VCE = 15 V

VCE = 15 V

f = 1000 MHz

Figure 5. Broadband Noise Figure Figure 6. Junction Capacitance versus Voltage

Figure 7. 1.0 dB Compression Point versus

Collector Current

Figure 8. Third Order Intercept Point

TYPICAL PERFORMANCE

NF, NOISE FIGURE (dB)

7

6

5

4

3

2

VCC = 15 V
f = 300 MHz

CIRCUIT PER
FIGURE 16

1009080

70605040

IC, COLLECTOR CURRENT (mA)

110 120

VCB, COLLECTOR BASE VOLTAGE (V)

CAPACITANCE (pF)

10

1 2

7

5

3

2

1

3 5 7 10

C

ob

C

cb

V

out

, OUTPUT VOLTAGE (dBmV)

80

76

72

68

64

60

1009080

70605040

IC, COLLECTOR CURRENT (mA)

110 120

VCC = 15 V
f = 200 MHz

CIRCUIT PER
FIGURE 16

P , OUTPUT POWER (dBm)

out

P , OUTPUT POWER (dBm)

out

31
29
27
25
23
21
19
17
15
13

11

60

80

706050403020

Pin, INPUT POWER (dBm)

50

40

30

20

10

100

3RD ORDER
INTERCEPT

f1 = 205 MHz
f2 = 211 MHz
VCC = 15 V
IC = 90 mA

+1 dB

COMP. PT.

CIRCUIT PER
FIGURE 16