Motorola MRF5811LT1 Datasheet
1
MRF5811LT1MOTOROLA RF DEVICE DATA
The RF Line
Designed for high current, low power amplifiers up to 1.0 GHz.
• Low Noise (2.0 dB @ 500 MHz)
• Low Intermodulation Distortion
• High Gain
• State–of–the–Art Technology
Fine Line Geometry
Arsenic Emitters
Gold Top Metallization
Nichrome Thin–Film Ballasting Resistors
• Excellent Dynamic Range
• Fully Characterized
• High Current–Gain Bandwidth Product
• Available in Tape and Reel by Adding T1 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
18 Vdc
Collector–Base Voltage V
CBO
36 Vdc
Emitter–Base Voltage V
EBO
2.5 Vdc
Collector Current — Continuous I
C
200 mAdc
Thermal Resistance θJC (1) R
θJC
106 °C/W
Total Device Dissipation @ TC = 75°C
Derate above TC = 75°C
P
D
0.71
9.4
Watts
mW/°C
Storage Junction Temperature Range T
stg
– 55 to +150 °C
Maximum Junction Temperature T
Jmax
150 °C
DEVICE MARKING
MRF5811L = 20
NOTES:
1. Case temperature measured on collector lead immediately adjacent to body of package.
Order this document
by MRF5811LT1/D
SEMICONDUCTOR TECHNICAL DATA
IC = 200 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318A–05, STYLE 1
Motorola, Inc. 1995
REV 1
MRF5811LT1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
V
(BR)CEO
18 — — Vdc
Collector–Base Breakdown Voltage
(IC = 1.0 mAdc, IE = 0)
V
(BR)CBO
36 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
V
(BR)EBO
2.5 — — Vdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, VBE = 0)
I
EBO
— — 100 µAdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
I
CBO
— — 100 µAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 50 mAdc, VCE = 5.0 Vdc)
h
FE
50 — 200 —
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 2.0 — pF
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
cb
— 1.2 2.0 pF
Current–Gain Bandwidth Product (2)
(IC = 75 mAdc, VCE = 10 Vdc, f = 1.0 GHz)
f
T
— 5.0 — GHz
FUNCTIONAL TESTS
Noise Figure (Minimum), Figure 3
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
NF
min
— 2.0 3.0 dB
Noise Figure (50 Ohm Insertion)
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
NF
50 Ω
— 2.5 — dB
Power Gain at Optimum Noise Figure, Figure 3
(IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz)
G
NF
— 18.4 — dB
Insertion Gain
(IC = 50 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
|S21|
2
— 14.2 — dB
Maximum Unilateral Gain (2)
(IC = 50 mAdc, VCE = 6.0 Vdc, f = 500 MHz)
G
U max
— 18 — dB
NOTES:
1. 300 µs pulse on Tektronix 576 or equivalent.
2. G
Umax
=
|S
21
|
2
(1
–
|S11|2)(1–|S
22
|2)
3
MRF5811LT1MOTOROLA RF DEVICE DATA
Figure 1. Cib Input Capacitance versus Voltage Figure 2. Ccb, Cob Collector–Base
Capacitance versus Voltage
TYPICAL CHARACTERISTICS
*BIAS
TEE
**SLUG TUNER
*BIAS
TEE
**SLUG TUNER
RF OUTPUT
RF INPUT
***
DUT
**MICROLAB/FXR
**SF–11N FOR f < 1 GHz
**SF–31N FOR f > 1 GHz
V
BE
VCE = 10 Vdc
*HP11590B BIAS
*NETWORK
***HP11608A TRANSISTOR FIXTURE
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
12
10
8
6
4
2
0
321
VEB, EMITTER–BASE VOLTAGE (VOLTS)
f = 1 MHz
5
2
0
0
Vcb, COLLECTOR–BASE (VOLTS)
4
3
1
2 4 6 8 10
f = 1 MHz
C
ob
C
cb
Figure 3. MRF5811L Functional Circuit Schematic
8
6
4
2
0
1000 20 40 60 80
IC, COLLECTOR CURRENT (mA)
f
T
, GAIN–BANDWIDTH PRODUCT (GHz)
Figure 4. Gain–Bandwidth Product versus
Collector Current
VCE = 6 Vdc
f = 1 GHz
24
0
100.2 0.3 0.5 1 2
f, FREQUENCY (GHz)
G
U(max)
, GAIN (dB)
Figure 5. G
U(max)
Maximum Unilateral Gain,
|S21|2 versus Frequency
22
20
18
16
14
12
10
8
6
3 5
VCE = 6 Vdc
IC = 50 mA
G
U(max)
|S21|
2
C
ib
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