Motorola MRF557 Datasheet

1

MRF557MOTOROLA RF DEVICE DATA

The RF Line

 
   

Designed primarily for wideband l arge s ignal predriver stages in the

800 MHz frequency range.

• Specified @ 12.5 V, 870 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 8.0 dB
Efficiency 60% (Typ)

• Cost Effective PowerMacro Package

• Electroless Tin Plated Leads for Improved Solderability

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

16 Vdc

Collector–Base Voltage V

CBO

36 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

400 mAdc

Total Device Dissipation @ TC = 75°C (1, 2)

Derate above 75°C

P

D

3.0
40

Watts

mW/°C

Storage Temperature Range T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

25 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, IB = 0)

V

(BR)CEO

16 — — Vdc

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, VBE = 0)

V

(BR)CES

36 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

I

CES

— — 0.1 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)

h

FE

50 90 200 —

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

C

ob

— 3.5 5.0 pF

NOTES: (continued)

1. TC, Case temperature measured on collector lead immediately adjacent to body of package.

2. The MRF557 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.

Order this document

by MRF557/D

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SEMICONDUCTOR TECHNICAL DATA



1.5 W, 870 MHz

RF LOW POWER

TRANSISTOR
NPN SILICON

CASE 317D–02, STYLE 2

 Motorola, Inc. 1995

REV 7

MRF557
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain Figures 1, 2

(VCC = 12.5 Vdc, P

out

= 1.5 W, f = 870 MHz)

G

pe

8.0 9.0 — dB

Collector Efficiency Figures 1, 2

(VCC = 12.5 Vdc, P

out

= 1.5 W, f = 870 MHz)

η

c

55 60 — %

Load Mismatch Stress Figures 1, 2

(VCC = 15.5 Vdc, Pin = 225 mW, f = 870 MHz,
VSWR ≥ 10:1 all phase angles)

ψ

No Degradation in Output Power

Figure 1. 800–880 MHz Broadband Circuit

C1, C2, C5, C7 — 0.8–8.0 pF Johanson Gigatrim*
C3, C4 — 15 pF Clamped Mica, Mini–Underwood
C6 — 27 pF Clamped Mica, Mini–Underwood
C8 — 91 pF Clamped Mica, Mini–Underwood
C9 — 68 pF Clamped Mica, Mini–Underwood
C10 — 1.0 µF, 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B
PCB — 1/16″ Glass Teflon, εr = 2.56

*Fixed tuned for broadband response.

L1, L4 — 5 Turns #21 AWG, 5/32″ ID
L2, L3 — 60 x 125 x 250 Mils Copper Tab on

L2, L3 — 27 Mil Thick Alumina Substrate

L5 — 7 Turns #21 AWG, 5/32″ ID
Z1 — 1.65 x 0.163″ Microstrip, Zo = 50 Ω
Z2 — 0.85 x 0.163″ Microstrip, Zo = 50 Ω
Z3 — 0.625 x 0.163″ Microstrip, Zo = 50 Ω
Z4 — 1.35 x 0.163″ Microstrip, Zo = 50 Ω

B

B

RF

POWER

INPUT

RF
POWER
OUTPUT

D.U.T.

Z1

+

Z2

Z3 Z4

C10

+

–

C9

L5

C8

L4

L3

L2

L1

C1 C2

C3

C4

C5 C7

C6

V

CC