Motorola MRF555 Datasheet

1

MRF555MOTOROLA RF DEVICE DATA

The RF Line

 
   

Designed primarily for wideband large signal predriver stages in the UHF

frequency range.

• Specified @ 12.5 V, 470 MHz Characteristics @ P

out

= 1.5 W
Common Emitter Power Gain = 12.5 dB (Typ)
Efficiency 60% (Typ)

• Cost Effective PowerMacro Package

• Electroless Tin Plated Leads for Improved Solderability

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

16 Vdc

Collector–Base Voltage V

CBO

36 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

400 mAdc

Operating Junction Temperature T

J

150 °C

Total Device Dissipation @ TC = 75°C (1, 2)

Derate above 75°C

P

D

3.0
40

Watts

mW/°C

Storage Temperature Range T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

25 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, IB = 0)

V

(BR)CEO

16 — — Vdc

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, VBE = 0)

V

(BR)CES

36 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

I

CES

— — 0.1 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)

h

FE

50 90 200 —

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 15 Vdc, IE = 0, f = 1.0 MHz)

C

ob

— 3.5 5.0 pF

NOTES: (continued)

1. TC, Case temperature measured on collector lead immediately adjacent to body of package.

2. The MRF555 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.

Order this document

by MRF555/D

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SEMICONDUCTOR TECHNICAL DATA



1.5 W, 470 MHz

RF LOW POWER

TRANSISTOR
NPN SILICON

CASE 317D–02, STYLE 2

 Motorola, Inc. 1995

REV 7

MRF555
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

FUNCTIONAL TESTS (f = 470 MHz)

Common–Emitter Power Gain

(VCC = 12.5 Vdc, P

out

= 1.5 W)

G

pe

11 12.5 — dB

Collector Efficiency

(VCC = 12.5 Vdc, P

out

= 1.5 W)

η

c

50 60 — %

Load Mismatch Stress

(VCC = 15.5 Vdc, Pin = 125 mW,
VSWR ≥ 10:1 all phase angles)

ψ

No Degradation in Output Power

Figure 1. 400–512 MHz Broadband Circuit

*C1, C3, C6 — 0.8–11 pF Johanson
C2 — 15 pF Clamped Mica, Mini–Underwood
C4 — 36 pF Clamped Mica, Mini–Underwood
C5 — 470 pF Ceramic Chip Capacitor
C7 — 91 pF Clamped Mica, Mini–Underwood
C8 — 68 pF Clamped Mica, Mini–Underwood
C9 — 1.0 µF, 25 V Tantalum
B — Bead, Ferroxcube 56–590–65/3B

*Fixed tuned for broadband response

L1 — 5 Turns #21 AWG, 5/32″ I.D.
L2, L3 — 60 x 125 x 250 Mils Copper Pad on 27 Mil Thick

L2, L3 — Alumina Substrate

L4, L5 — 7 Turns #21 AWG 5/32″ I.D.
Z1 — 1.29″ x 0.16″ Microstrip
Z2 — 0.70″ x 0.16″ Microstrip
Z3 — 2.18″ x 0.16″ Microstrip

PCB — 1/16″ Glass Teflon, 1 oz. cu. clad,

PCB — double sided, εr = 2.5

Figure 2. Performance in Broadband Circuit

RF

POWER

INPUT

RF

POWER

OUTPUT

B

D.U.T.

Z1 Z2

Z3

C1

C2

C3

C4

L2

L3

C7

L4

B

L5

C8 C9

+

+

–

C5

C6

G

pe

, POWER GAIN (dB)

c

η

, COLLECTOR

20

16

12

8

0

4

400

65
60

f, FREQUENCY (MHz)

425 450 475 500 525

20

15

10

55

EFFICIENCY

%

IRL, INPUT

RETURN LOSS

(dB)

G

pe

η

c

IRL

P

out

= 1.5 W

VCC = 12.5 Vdc

V

CC

L1