Motorola MRF553 Datasheet

1

MRF553MOTOROLA RF DEVICE DATA

The RF Line

 
   

Designed primarily for wideband large signal predriver stages in the VHF

frequency range.

• Specified @ 12.5 V, 175 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11.5 dB
Efficiency 60% (Typ)

• Cost Effective PowerMacro Package

• Electroless Tin Plated Leads for Improved Solderability

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

16 Vdc

Collector–Base Voltage V

CBO

36 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

500 mAdc

Total Device Dissipation @ TC = 75°C (1, 2)

Derate above 75°C

P

D

3.0
40

Watts

mW/°C

Storage Temperature Range T

stg

–55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance Junction to Case R

θJC

25 °C/W

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V

(BR)CEO

16 — — Vdc

Collector–Emitter Breakdown Voltage

(IC = 5.0 mAdc, VBE = 0)

V

(BR)CES

36 — — Vdc

Collector–Base Breakdown Voltage

(IC = 5.0 mAdc, IE = 0)

V

(BR)CBO

36 — — Vdc

Emitter–Base Breakdown Voltage

(IE = 1.0 mAdc, IC = 0)

V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

I

CES

— — 5.0 mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = 250 mAdc, VCE = 5.0 Vdc)

h

FE

30 — 200 —

NOTES: (continued)

1. TC, Case temperature measured on collector lead immediately adjacent to body of package.

2. The MRF553 PowerMacro must be properly mounted for reliable operation. AN938, “Mounting Techniques in PowerMacro Transistor,”
discusses methods of mounting and heatsinking.

Order this document

by MRF553/D



SEMICONDUCTOR TECHNICAL DATA



1.5 W, 175 MHz

RF LOW POWER

TRANSISTOR
NPN SILICON

CASE 317D–02, STYLE 2

 Motorola, Inc. 1995

REV 7

MRF553
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

DYNAMIC CHARACTERISTICS

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

C

ob

— 12 20 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain Figures 1, 2

(VCC = 12.5 Vdc, P

out

= 1.5 W, f = 175 MHz)

G

pe

11.5 13 — dB

Collector Efficiency Figures 1, 2

(VCC = 12.5 Vdc, P

out

= 1.5 W, f = 175 MHz)

η 50 60 — %

Load Mismatch Stress

(VCC = 12.5 Vdc, P

out

= 1.5 W, f = 175 MHz,

VSWR ≥ 10:1 All Phase Angles)

ψ

No Degradation in Output Power

—

Figure 1. 140–175 MHz Broadband Circuit Schematic

C1 — 36 pF Mini Underwood
C2 — 47 pF Mini Underwood
C3 — 91 pF Mini Underwood
C4 — 68 pF Mini Underwood
C5, C9 — 1.0 µF Erie Red Cap Capacitor
C6, C10 — 0.1 µF, 35 V Tantulum
C7 — 470 pF Chip Capacitor
C8 — 2200 pF Chip Capacitor
R1 — 4.7 kΩ, 1/4 W
R2 — 100 Ω, 1/4 W
D1 — 1N4148 Diode

L1 — 3 Turns, #18 AWG, 0.210″ ID, 3/16″ Length
L2, L4, L7 — 0.62″, #18 AWG Wire Bent into “V”
L3, L6 — 60 x 125 x 250 Mils Copper Pad on 27 Mils Thick Alumina Substrate
L5 — 12 µH Molded Choke
L8 — 7 Turns, #18 AWG, 0.170″ ID, 7/16″ Length
L9 — 1.0″, #18 AWG Wire with 5 Ferrite Beads
B — Ferrite Bead
Board Material — Glass Teflon, εr = 2.56, t = 0.0625″

VBB =

12.5 V

RF

INPUT

RF

OUTPUT

R1

C5 C6

+

R2

D1

B

L5

L4

C4

L3

D.U.T.

L6

L2

C2

L1

C1 C3

L7

C7

C10C9

5 x B

L9

B

C8

L8

VCC =

12.5 V

+