Motorola MRF5035 Datasheet

1

MRF5035MOTOROLA RF DEVICE DATA

The RF MOSFET Line

    

N–Channel Enhancement–Mode

Designed for broadband commercial and industrial applications at frequen­cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.

• Guaranteed Performance at 512 MHz, 12.5 Volt

Output Power — 35 Watts
Power Gain — 6.5 dB Min
Efficiency — 50% Min

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• All Gold Metal for Ultra Reliability

• Capable of Handling 20:1 Load VSWR, @ 15.5 Volt, 512 MHz,

2 dB Overdrive

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V

DSS

36 Vdc

Drain–Gate Voltage (RGS = 1 MΩ) V

DGR

36 Vdc

Gate–Source Voltage V

GS

± 20 Vdc

Drain Current — Continuous I

D

15 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°C

P

D

97

0.56

Watts

W/°C

Storage Temperature Range T

stg

– 65 to +150 °C

Operating Junction Temperature T

J

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

θJC

1.8 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 20 mAdc) V

(BR)DSS

36 — — Vdc

Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) I

DSS

— — 5 mAdc

Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0) I

GSS

— — 5 µAdc

(continued)

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF5035/D



SEMICONDUCTOR TECHNICAL DATA



35 W, 12.5 VOLTS, 512 MHz

N–CHANNEL BROADBAND

RF POWER FET

CASE 316–01, STYLE 3

 Motorola, Inc. 1994

REV 6

MRF5035
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS — continued (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 25 mAdc)

V

GS(th)

1.25 2.3 3.5 Vdc

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 3 Adc)

V

DS(on)

— — 0.422 Vdc

Forward Transconductance

(VDS = 10 Vdc, ID = 3 Adc )

g

fs

3.2 — — S

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

C

iss

— 88 — pF

Output Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

C

oss

— 197 — pF

Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

C

rss

18 24 29 pF

FUNCTIONAL TESTS (In Motorola Test Fixture)

Common–Source Amplifier Power Gain

(VDD = 12.5 Vdc, P

out

= 35 W, f = 512 MHz

IDQ = 400 mA) f = 175 MHz

G

ps

6.5
—

7.5
12

—
—

dB

Drain Efficiency

(VDD = 12.5 Vdc, P

out

= 35 W, f = 512 MHz

IDQ = 400 mA) f = 175 MHz

η

50
—

55
55

—
—

%

Load Mismatch

(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
Load VSWR = 20:1, All Phase Angles at Frequency of Test)

ψ

No Degradation in Output Power

Components List

B1, B2 Short Ferrite Bead, Fair Rite Products
C1, C14 10 µF, 50 V, Electrolytic
C2 1500 pF, Chip Capacitor
C3 140 pF, Chip Capacitor
C4, C11 0–10pF, Trimmer Capacitor
C5 30 pF, Chip Capacitor
C6, C7 43 pF, Chip Capacitor
C8, C9 36 pF, Chip Capacitor
C10 3.6 pF, Chip Capacitor
C12, C15, C16 120 pF, Chip Capacitor
C13 0.1 µF, Chip Capacitor
L1 5 Turns, 18 AWG, 0.116″ ID
L2 8 Turns, 20 AWG, 0.125″ ID

N1, N2 Type N Flange Mount
R1 1 kΩ, 1/4 W, Carbon
R2 1 MΩ, 1/4 W, Carbon
R3 100 Ω, 1/4 W, Carbon
R4 110 Ω, 1/4 W, Carbon
Z1, Z9 Transmission Line*
Z2 Transmission Line*
Z3 Transmission Line*
Z4 Transmission Line*
Z7 Transmission Line*
Z8 Transmission Line*
Board Glass Teflon 0.060″

*See Photomaster for Dimensions

Figure 1. 512 MHz Narrowband Test Circuit Electrical Schematic

C15

B2

Z4

RF Input

N1

V

GG

R1

C4

Z3Z1 Z2

RF Output

N2

Z9C16Z8Z7

V

DD

C14

C12

C13

C3

L1

L2

C11

C10

DUT

C5

R2

C1

C2

B1

Socket

R3

C6 C9

C7 C8

R4

+ +

3

MRF5035MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

C

rss

C

iss

C

oss

VGS = 0 V
f = 1 MHz

Typical Device Shown

Typical Device Shown

f = 400 MHz

VDD = 12.5 V
Pin = 7 W

3 W

5 W

7 W

Pin = 10 W

3 W

5 W

7 W

Pin = 10 W

VDD = 12.5 V
IDQ = 400 mA

520 MHz

470 MHzf = 400 MHz

P

out

, OUTPUT POWER (WATTS)

14

Figure 2. Output Power versus Input Power

50

Pin, INPUT POWER (WATTS)

10

0

4

20

40

30

Figure 3. Output Power versus Supply Voltage

55

0

8

VDD, SUPPLY VOLTAGE (VOLTS)

10

45

25

15

122 6 10 14

35

P

out

, OUTPUT POWER (WATTS)

Figure 4. Output Power versus Supply Voltage

VDD, SUPPLY VOLTAGE (VOLTS)

Figure 5. Output Power versus Gate Voltage

50

VGS, GATE–SOURCE VOLTAGE (VOLTS)

1 4

40

30

2 3

6 16

0

0

0

10

20

P

out

, OUTPUT POWER (WATTS)

P

out

, OUTPUT POWER (WATTS)

5

Figure 6. Drain Current versus Gate Voltage

6

VGS, GATE–SOURCE VOLTAGE (VOLTS)

1

0

2

2

4

Figure 7. Capacitance versus Voltage

0

5

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

10

350

250

151 3 4 20

400

0 250

C, CAPACITANCE (pF)

300

200

100

50

150

30

8 12

50

5

40

20

10

30

9 11 13 157

55

0

8 10

45

25

15

12 14

35

6 16

50

5

40

20

10

30

9 11 13 157

65

I

D

, DRAIN CURRENT (AMPS)

5

3

IDQ = 400 mA
f = 400 MHz

IDQ = 400 mA
f = 520 MHz

520 MHz

VDS = 10 V