Motorola MRF5015 Datasheet



SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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N–Channel Enhancement–Mode

Designed for broadband commercial and industrial applications at frequen­cies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.

• Guaranteed Performance at 512 MHz, 12.5 Volts

Output Power — 15 Watts
Power Gain — 10 dB Min
Efficiency — 50% Min

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• All Gold Metal for Ultra Reliability

• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive

• Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

Order this document

by MRF5015/D



15 W, 512 MHz, 12.5 VOLTS

N–CHANNEL BROADBAND

RF POWER FET

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1 MΩ) V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

ELECTRICAL CHARACTERISTICS (T

Characteristic

= 25°C unless otherwise noted.)

C

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage (VGS = 0, ID = 5 mAdc) V
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) I
Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0) I

(BR)DSS

DSS
GSS

CASE 319–07, STYLE 3

DSS

DGR

GS

D

P

D

stg

J

θJC

36 — — Vdc
— — 5 mAdc
— — 2 µAdc

36 Vdc
36 Vdc

± 20 Vdc

6 Adc

50

0.29

– 65 to +150 °C

200 °C

3.5 °C/W

Watts

W/°C

(continued)

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 6

 Motorola, Inc. 1994

MRF5015MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS — continued (T

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 10 mAdc)
Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance

(VDS = 10 Vdc, ID = 1 Adc )

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance

(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)

FUNCTIONAL TESTS (In Motorola Test Fixture)

Common–Source Amplifier Power Gain

(VDD = 12.5 Vdc, P

IDQ = 100 mA) f = 175 MHz
Drain Efficiency

(VDD = 12.5 Vdc, P

IDQ = 100 mA) f = 175 MHz
Load Mismatch

(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,

Load VSWR = 20:1, All Phase Angles at Frequency of Test)

= 15 W, f = 512 MHz

out

= 15 W, f = 512 MHz

out

= 25°C unless otherwise noted.)

C

V

GS(th)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

G

ps

η

ψ

1.25 2.3 3.5 Vdc

— — 0.375 Vdc

1.2 — — S

— 33 — pF

— 74 — pF

7 8.8 10.8 pF

10
—

50
—

11.5
15

55
55

No Degradation in Output Power

—
—

—
—

dB

%

RF

Input

GG

R1

C5

R2

Z3

C1

Z4

Z5

+

C2

R3

C6

V

N1

C4

Z1 Z2

B1, B2 Ferrite Bead, Fair Rite Products
C1, C13 10 µF, 50 V, Electrolytic
C2, C12 0.1 µF, Chip Capacitor
C3, C4, C10, C11 120 pF, Chip Capacitor
C5, C9 0 to 20 pF, T rimmer Capacitor
C6 36 pF, Chip Capacitor
C7 43 pF, Chip Capacitor
C8 30 pF, Chip Capacitor
L1, L2 7 Turns, 24 AWG 0.116″ ID
N1, N2 Type N Flange Mount
R1 1 kΩ, 1/4 W, Carbon
R2 470 kΩ, 1/4 W, Carbon

B1

C3

Z6

C7

L1

C12

Socket

DUT

R3 160 Ω, 0.1 W Chip
Z1, Z11 Transmission Line*
Z2 Transmission Line*
Z3 Transmission Line*
Z4 Transmission Line*
Z5 Transmission Line*
Z6 Transmission Line*
Z7, Z8 Transmission Line+
Z9 Transmission Line*
Z10 Transmission Line*
Board Glass Teflon 0.060″

B1

C11

L2

Z8Z7

C8

+ Part of Capacitor Mount Socket
*See Photomaster

C13

C9

V

+

DD

N2

Z11C10Z10Z9

RF

Output

MRF5015
2

Figure 1. 512 MHz Narrowband T est Circuit Electrical Schematic

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

25

470 MHzf = 400 MHz

20

520 MHz

15

10

, OUTPUT POWER (WATTS)

5

out

P

0

0

1

Pin, INPUT POWER (WATTS)

VDD = 12.5 V
IDQ = 100 mA

2.5

Figure 2. Output Power versus Input Power

25

VDD = 12.5 V
Pin = 1.5 W
f = 520 MHz

20

Typical Device Shown

15

, OUTPUT POWER (WATTS)

10

out

P

5

0

134

26

VGS, GATE–SOURCE VOLTAGE (VOLTS)

5

25

IDQ = 100 mA

20

15

10

, OUTPUT POWER (WATTS)

out

P

f = 520 MHz

5

0

616

8

10

VDD, SUPPLY VOLT AGE (VOLTS)

120.5 1.5 2 14

Pin = 1.5 W

1 W

0.5 W

Figure 3. Output Power versus Supply Voltage

2

1.8

VDS = 10 V

1.6

1.4

1.2
1

0.8

0.6

, DRAIN CURRENT (AMPS)

D

I

0.4

0.2
0

0

VGS, GATE–SOURCE VOLTAGE (VOLTS)

Typical Device Shown

14

2

3

200

150

100

C, CAPACITANCE (pF)

Figure 4. Output Power versus Gate Voltage

C

oss

50

C

rss

0

VDS, DRAIN–SOURCE VOLTAGE (VOL TS)

10

C

iss

Figure 6. Capacitance versus V oltage

VGS = 0
f = 1 MHz

25

1.04

1.03

1.02

1.01

1.00

0.99

0.98

0.97

0.96

, GATE-SOURCE VOLTAGE (NORMALIZED)

0.95

GS

V

0.94

30

Figure 5. Drain Current versus Gate Voltage

VDD = 12.5 V

ID = 0.05 A

– 25 1000

0

25

5051520 75

TC, CASE TEMPERATURE (

ID = 1.5 A

°

Figure 7. Gate–Source V oltage

versus Case T emperature

ID = 1 A

ID = 0.5 A

ID = 0.25 A

125 150 175

C)

MRF5015MOTOROLA RF DEVICE DATA

3