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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device
makes it ideal for large–signal, common source amplifier applications in 12.5
volt mobile, and base station FM equipment.
• Guaranteed Performance at 512 MHz, 12.5 Volts
Output Power — 15 Watts
Power Gain — 10 dB Min
Efficiency — 50% Min
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• Excellent Thermal Stability
• All Gold Metal for Ultra Reliability
• Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 512 MHz, 2 dB Overdrive
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Order this document
by MRF5015/D
15 W, 512 MHz, 12.5 VOLTS
N–CHANNEL BROADBAND
RF POWER FET
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1 MΩ) V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted.)
C
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage (VGS = 0, ID = 5 mAdc) V
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) I
Gate–Source Leakage Current (VGS = 20 Vdc, VDS = 0) I
(BR)DSS
DSS
GSS
CASE 319–07, STYLE 3
DSS
DGR
GS
D
P
D
stg
J
θJC
36 — — Vdc
— — 5 mAdc
— — 2 µAdc
36 Vdc
36 Vdc
± 20 Vdc
6 Adc
50
0.29
– 65 to +150 °C
200 °C
3.5 °C/W
Watts
W/°C
(continued)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
Motorola, Inc. 1994
MRF5015MOTOROLA RF DEVICE DATA
1
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ELECTRICAL CHARACTERISTICS — continued (T
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 10 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc )
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 12.5 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 12.5 Vdc, P
IDQ = 100 mA) f = 175 MHz
Drain Efficiency
(VDD = 12.5 Vdc, P
IDQ = 100 mA) f = 175 MHz
Load Mismatch
(VDD = 15.5 Vdc, 2 dB Overdrive, f = 512 MHz,
Load VSWR = 20:1, All Phase Angles at Frequency of Test)
= 15 W, f = 512 MHz
out
= 15 W, f = 512 MHz
out
= 25°C unless otherwise noted.)
C
V
GS(th)
V
DS(on)
g
fs
C
iss
C
oss
C
rss
G
ps
η
ψ
1.25 2.3 3.5 Vdc
— — 0.375 Vdc
1.2 — — S
— 33 — pF
— 74 — pF
7 8.8 10.8 pF
10
—
50
—
11.5
15
55
55
No Degradation in Output Power
—
—
—
—
dB
%
RF
Input
GG
R1
C5
R2
Z3
C1
Z4
Z5
+
C2
R3
C6
V
N1
C4
Z1 Z2
B1, B2 Ferrite Bead, Fair Rite Products
C1, C13 10 µF, 50 V, Electrolytic
C2, C12 0.1 µF, Chip Capacitor
C3, C4, C10, C11 120 pF, Chip Capacitor
C5, C9 0 to 20 pF, T rimmer Capacitor
C6 36 pF, Chip Capacitor
C7 43 pF, Chip Capacitor
C8 30 pF, Chip Capacitor
L1, L2 7 Turns, 24 AWG 0.116″ ID
N1, N2 Type N Flange Mount
R1 1 kΩ, 1/4 W, Carbon
R2 470 kΩ, 1/4 W, Carbon
B1
C3
Z6
C7
L1
C12
Socket
DUT
R3 160 Ω, 0.1 W Chip
Z1, Z11 Transmission Line*
Z2 Transmission Line*
Z3 Transmission Line*
Z4 Transmission Line*
Z5 Transmission Line*
Z6 Transmission Line*
Z7, Z8 Transmission Line+
Z9 Transmission Line*
Z10 Transmission Line*
Board Glass Teflon 0.060″
B1
C11
L2
Z8Z7
C8
+ Part of Capacitor Mount Socket
*See Photomaster
C13
C9
V
+
DD
N2
Z11C10Z10Z9
RF
Output
MRF5015
2
Figure 1. 512 MHz Narrowband T est Circuit Electrical Schematic
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS
25
470 MHzf = 400 MHz
20
520 MHz
15
10
, OUTPUT POWER (WATTS)
5
out
P
0
0
1
Pin, INPUT POWER (WATTS)
VDD = 12.5 V
IDQ = 100 mA
2.5
Figure 2. Output Power versus Input Power
25
VDD = 12.5 V
Pin = 1.5 W
f = 520 MHz
20
Typical Device Shown
15
, OUTPUT POWER (WATTS)
10
out
P
5
0
134
26
VGS, GATE–SOURCE VOLTAGE (VOLTS)
5
25
IDQ = 100 mA
20
15
10
, OUTPUT POWER (WATTS)
out
P
f = 520 MHz
5
0
616
8
10
VDD, SUPPLY VOLT AGE (VOLTS)
120.5 1.5 2 14
Pin = 1.5 W
1 W
0.5 W
Figure 3. Output Power versus Supply Voltage
2
1.8
VDS = 10 V
1.6
1.4
1.2
1
0.8
0.6
, DRAIN CURRENT (AMPS)
D
I
0.4
0.2
0
0
VGS, GATE–SOURCE VOLTAGE (VOLTS)
Typical Device Shown
14
2
3
200
150
100
C, CAPACITANCE (pF)
Figure 4. Output Power versus Gate Voltage
C
oss
50
C
rss
0
VDS, DRAIN–SOURCE VOLTAGE (VOL TS)
10
C
iss
Figure 6. Capacitance versus V oltage
VGS = 0
f = 1 MHz
25
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
, GATE-SOURCE VOLTAGE (NORMALIZED)
0.95
GS
V
0.94
30
Figure 5. Drain Current versus Gate Voltage
VDD = 12.5 V
ID = 0.05 A
– 25 1000
0
25
5051520 75
TC, CASE TEMPERATURE (
ID = 1.5 A
°
Figure 7. Gate–Source V oltage
versus Case T emperature
ID = 1 A
ID = 0.5 A
ID = 0.25 A
125 150 175
C)
MRF5015MOTOROLA RF DEVICE DATA
3