Motorola MRF5007R1, MRF5007 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

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by MRF5007/D

The RF MOSFET Line

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N–Channel Enhancement–Mode

The MRF5007 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large–signal, common source
amplifier applications in 7.5 Volt portable FM equipment.

• Guaranteed Performance at 512 MHz, 7.5 Volts

Output Power = 7.0 Watts
Power Gain = 10 dB Min
Efficiency = 50% Min

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• All Gold Metal for Ultra Reliability

• Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive

• True Surface Mount Package

• Available in Tape and Reel by Adding R1 Suffix to Part Number.

R1 Suffix = 500 Units per 16 mm, 7 inch Reel.

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Drain–Gate Voltage (RGS = 1.0 Meg Ohm) V
Gate–Source Voltage V
Drain Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C
Storage Temperature Range T
Operating Junction Temperature T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R





7.0 W, 7.5 Vdc
512 MHz

N–CHANNEL

BROADBAND

RF POWER FET

CASE 430B–02, Style 1

DSS

DGR

GS

D

P

D

stg

J

θJC

25 Vdc
25 Vdc

±20 Vdc

4.5 Adc
25

0.14

–65 to +150 °C

200 °C

3.8 °C/W

Watts

W/°C

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

REV 2

 Motorola, Inc. 1995

MRF5007 MRF5007R1MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 2.5 mAdc)

Zero Gate Voltage Drain Current

(VDS = 15 Vdc, VGS = 0)

Gate–Source Leakage Current

(VGS = 20 Vdc, VDS = 0)

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 10 mAdc)

Drain–Source On–Voltage

(VGS = 10 Vdc, ID = 1.0 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 1.0 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 7.5 Vdc, VGS = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (In Motorola Test Fixture)

Common–Source Amplifier Power Gain f = 512 MHz

(VDD = 7.5 Vdc, P

Drain Efficiency f = 512 MHz

(VDD = 7.5 Vdc, P

= 7.0 W, IDQ = 75 mA)

out

= 7.0 W, IDQ = 75 mA)

out

= 25°C unless otherwise noted.)

C

V

(BR)DSS

I

DSS

I

GSS

V

GS(th)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

G

ps

η 50 55 — %

25 — — Vdc

— — 1.0 mAdc

— — 1.0 µAdc

1.25 2.2 3.5 Vdc

— — 0.3 Vdc

0.9 — — S

— 32 — pF

— 63 — pF

10 13 16 pF

10 11.5 — dB

RF

INPUT

C3

R3

C10 C11

R2

L1

Z5Z4Z3Z2Z1

C4

V

GG

+

C8 C9 R4

N1

C1

C2

B1 Fair Rite Products Short Ferrite Bead (2743021446)
C1, C7 100 pF, 100 mil Chip
C2, C6 0–20 pF, Johanson
C3 47 pF, Miniature Clamped Mica Capacitor
C4 16 pF, Miniature Clamped Mica Capacitor
C5 21 pF, Miniature Clamped Mica Capacitor
C8, C13 10 µF, 50 V, Electrolytic
C9, C12 0.1 µF, Chip Capacitor
C10 1000 pF, 100 mil Chip
C11 140 pF, 100 mil Chip
L1 7 Turns, 0.076″ ID, #24 A WG Enamel
L2 5 Turns, 0.126″ ID, #20 A WG Enamel
N1, N2 Type N Flange Mount
R1 39 Ω, 1/4 W Carbon
R2 30 Ω, 0.1 W Chip

R1

Figure 1. 512 MHz Narrowband Test Circuit

B1

C12 C13

L2

Z6 Z7 Z8 Z9 Z10

C5 C6

DUT

R3 1.0 kΩ, 0.1 W Chip
R4 1.1 MΩ, 1/4 W Carbon
Z1, Z10 0.594″ x 0.08″ Microstrip
Z2 0.811″ x 0.08″ Microstrip
Z3 0.270″ x 0.08″ Microstrip
Z4 0.122″ x 0.08″ Microstrip
Z5 0.303″ x 0.08″ Microstrip
Z6 0.211″ x 0.08″ Microstrip
Z7 0.084″ x 0.08″ Microstrip
Z8 0.060″ x 0.08″ Microstrip
Z9 1.343″ x 0.08″ Microstrip
Board — Glass Teflon, 31 mils
Note: BeCu part locators (0.147″ x 0.093″)

Note: soldered onto Z5 and Z6

+

C7

V

DD

N2

RF

OUTPUT

MRF5007 MRF5007R1
2

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

12

10

8

6

, OUTPUT POWER (WATTS)

out

4

P

2

0 0.5 1 1.5 2

f = 400 MHz

470 MHz

520 MHz

VDD = 7.5 Vdc
IDQ = 75 mA

Pin, INPUT POWER (WATTS)

10

Pin = 700 mW

8

6

, OUTPUT POWER (WATTS)

out

P

4

678910

V

, SUPPLY VOLT AGE (VOLTS)

DD

500 mW

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage

10

Pin = 700 mW

8

500 mW

300 mW

10

Pin = 700 mW

8

300 mW

IDQ = 75 mA
f = 400 MHz

500 mW

300 mW

6

, OUTPUT POWER (WATTS)

out

P

4

678910

V

, SUPPLY VOLT AGE (VOLTS)

DD

IDQ = 75 mA
f = 470 MHz

6

, OUTPUT POWER (WATTS)

out

P

4

Figure 4. Output Power versus Supply Voltage

10

f = 400 MHz

8

520 MHz

6

, OUTPUT POWER (WATTS)

out

P

4

0123

TYPICAL DEVICE SHOWN
V

= 1.6 V

GS(th)

V

, GATE–SOURCE VOLTAGE (VOLTS)

GS

VDD = 7.5 Vdc
Pin = 0.7 W

4

3

2

, DRAIN CURRENT (AMPS)

1

D

I

0

Figure 6. Output Power versus Gate Voltage

IDQ = 75 mA
f = 520 MHz

678910

V

, SUPPLY VOLT AGE (VOLTS)

DD

Figure 5. Output Power versus Supply Voltage

TYPICAL DEVICE SHOWN

VDS = 10 Vdc

012 5

V

, GATE–SOURCE VOLTAGE (VOLTS)

GS

34

Figure 7. Drain Current versus Gate Voltage

MRF5007 MRF5007R1MOTOROLA RF DEVICE DATA

3