Motorola MRF492 Datasheet

1

MRF492MOTOROLA RF DEVICE DATA

The RF Line

 
  

Designed for 12.5 volt low band VHF large–signal power amplifier applica-

tions in commercial and industrial FM equipment.

• Specified 12.5 V, 50 MHz Characteristics —
Output Power = 70 W
Minimum Gain = 11 dB
Efficiency = 50%

• Load Mismatch Capability at High Line and RF Overdrive

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

18 Vdc

Collector–Base Voltage V

CBO

36 Vdc

Emitter–Base Voltage V

EBO

4.0 Vdc

Collector Current — Continuous I

C

20 Adc

Total Device Dissipation @ TC = 25°C (1)

Derate above 25°C

P

D

250

1.43

Watts

W/°C

Storage Temperature Range T

stg

–65 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case (2) R

θJC

0.7 °C/W

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) V

(BR)CEO

18 — — Vdc

Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V

(BR)CES

36 — — Vdc

Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V

(BR)EBO

4.0 — — Vdc

Collector Cutoff Current (VCE = 13.6 Vdc, VBE = 0) I

CES

— — 20 mAdc

ON CHARACTERISTICS

DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) h

FE

10 — 150 —

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) C

ob

— 275 450 pF

FUNCTIONAL TESTS

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, P

out

= 70 W, f = 50 MHz)

G

PE

11 13 — dB

Collector Efficiency

(VCC = 12.5 Vdc, P

out

= 70 W, f = 50 MHz)

η 50 — — %

NOTES:

1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.

2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

Order this document

by MRF492/D

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SEMICONDUCTOR TECHNICAL DATA



70 W, 50 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 211–11, STYLE 1

 Motorola, Inc. 1994

MRF492
2

MOTOROLA RF DEVICE DATA

Figure 1. 50 MHz Test Circuit

RFC2

DUT

RFC1

RF

INPUT

RF

OUTPUT

+12.5 Vdc

C6 C7

C4C3

C2 C5

L2 L3

C8

C1

L1

+
–

BEAD

100

80

60

40

20

0

0 1 2 3 4 5 6 7 8 9 10

Pin, INPUT POWER (WATTS)

VCC = 12.5 V
f = 50 MHz

VCC = 12.5 V
P

out

= 70 W

20

18

16

14

12

10

20 25 30 35 40 45 50

f, FREQUENCY (MHz)

G

PE

, POWER GAIN (dB)

P , OUTPUT POWER (WATTS)

out

C1, C8 — 9.0–180 pF, Arco 463
C2, C3, C4 — 80–480 pF, Arco 466
C5 — 1000 pF, 350 V, Unelco
C6 — 10 µF, 25 Vdc
C7 — 0.01 µF, Ceramic
RFC1 — 10 µH Molded Choke

RFC2 — 12 Turns, #16 AWG, Enameled Wire Closewound

RFC2 — on a 2.0 W Carbon Resistor

L1 — 2 Turns, #18 AWG Enameled Wire, 0.4″ ID, 0.15″ Long
L2 — Loop, #12 AWG Wire, 0.6″ High, 0.4″ Wide
L3 — 2 Turns, #12 AWG Wire, ID 0.4″, 0.25″ Long
Bead — Ferrite Bead Ferroxcube #56–590–65/3B

Figure 2. Output Power versus Input Power Figure 3. Power Gain versus Frequency