Motorola MRF454 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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  

Designed for power amplifier applications in industrial, commercial and

amateur radio equipment to 30 MHz.

• Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 80 Watts
Minimum Gain = 12 dB
Efficiency = 50%

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TC = 25°C

Derate above 25°C

Storage Temperature Range T

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

CEO
CBO
EBO

C

P

D

stg

θJC

25 Vdc
45 Vdc

4.0 Vdc
20 Adc

250

1.43

–65 to +150 °C

0.7 °C/W

Watts

W/°C

Order this document

by MRF454/D



80 W, 30 MHz

RF POWER
TRANSISTOR
NPN SILICON

CASE 211–11, STYLE 1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage (IC = 100 mAdc, IB = 0) V
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V

ON CHARACTERISTICS

DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) h

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz) C

FUNCTIONAL TESTS (Figure 1)

Common–Emitter Amplifier Power Gain

(VCC = 12.5 Vdc, P

Collector Efficiency

(VCC = 12.5 Vdc, P

Series Equivalent Input Impedance

(VCC = 12.5 Vdc, P

Series Equivalent Output Impedance

(VCC = 12.5 Vdc, P

Parallel Equivalent Input Impedance

(VCC = 12.5 Vdc, P

Parallel Equivalent Output Impedance

(VCC = 12.5 Vdc, P

= 80 W, f = 30 MHz)

out

= 80 W, f = 30 MHz)

out

= 80 W, f = 30 MHz)

out

= 80 W, f = 30 MHz)

out

= 80 W, f = 30 MHz)

out

= 80 W, f = 30 MHz)

out

(BR)CEO
(BR)CES
(BR)EBO

FE

ob

G

pe

η 50 — — %

Z

in

Z

out

— — 1.06 Ω

— — 1.19 Ω

18 — — Vdc
36 — — Vdc

4.0 — — Vdc

40 — 150 —

— — 250 pF

12 — — dB

— .938–j.341 — Ohms

— 1.16–j.201 — Ohms

— —

1817 pF

— —

777 pF

REV 1

 Motorola, Inc. 1997

MRF454MOTOROLA RF DEVICE DATA

1

L5

+

RF INPUT

C1

C2

C1, C2, C4 — ARCO 469
C3 — ARCO 466
C5 — 1000 pF, UNELCO
C6, C7 — 0.1 µF Disc Ceramic
C8 — 1000 µF/15 V Electrolytic
R1 — 10 Ohm/1.0 Watt, Carbon

L1

C5 C6 C7 C8

L3

DUT

C3

R1

L2

L1 — 3 Turns, #18 AWG, 5/16″ I.D., 5/16″ Long
L2 — VK200–20/4B, FERROXCUBE
L3 — 12 Turns, #18 AWG Enameled Wire, 1/4″ I.D., Close Wound
L4 — 3 Turns 1/8″ O.D. Copper Tubing, 3/8″ I.D., 3/4″ Long
L5 — 7 FERRITE Beads, FERROXCUBE #56–590–65/3B

Figure 1. 30 MHz T est Circuit Schematic

12.5 Vdc
–

RF OUTPUT

C4

L4

120
105

90
75
60
45
30

out

P , OUTPUT POWER (WATTS)

15

120

10

105

90
75
60
45
30

out

P , OUTPUT POWER (WATTS)

15

Pin = 5 V

3.5 W

1.75 W

f = 30 MHz

0

81357

10 12 14 16

9111315

VCC, SUPPLY VOLTAGE (VOLTS)

f = 30 MHz

0

0

V

= 13.6 V

CC

12.5 V

2468

Pin, INPUT POWER (WATTS)

9

Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage

17

18

MRF454
2

MOTOROLA RF DEVICE DATA