Motorola MRF426 Datasheet
1
MRF426MOTOROLA RF DEVICE DATA
The RF Line
. . . designed for high gain driver and output linear amplifier stages in 1.5 to
30 MHz HF/SSB equipment.
• Specified 28 Volt, 30 MHz Characteristics —
Output Power = 25 W (PEP)
Minimum Gain = 22 dB
Efficiency = 35%
• Intermodulation Distortion @ 25 W (PEP) —
IMD = –30 dB (Max)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Class A and AB Characterization
• BLX 13 Equivalent
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
35 Vdc
Collector–Base Voltage V
CBO
65 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
3.0 Adc
Withstand Current — 5 s — 6.0 Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
70
0.4
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.5 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V
(BR)CEO
35 — — Vdc
Collector–Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V
(BR)CBO
65 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) I
CES
— — 10 mAdc
NOTE: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Order this document
by MRF426/D
SEMICONDUCTOR TECHNICAL DATA
25 W (PEP), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–07, STYLE 1
Motorola, Inc. 1994
MRF426
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc)
h
FE
10 35 — —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 60 80 pF
FUNCTIONAL TESTS (SSB)
Common–Emitter Amplifier Gain
(VCC = 28 Vdc, P
out
= 25 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, ICQ = 25 mA)
G
PE
22 25 — dB
Collector Efficiency
(VCC = 28 Vdc, P
out
= 25 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, ICQ = 25 mA)
η 35 — — %
Intermodulation Distortion (2)
(VCC = 28 Vdc, P
out
= 25 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, ICQ = 25 mA)
IMD
(d3)
— –35 –30 dB
Load Mismatch
(VCC = 28 Vdc, P
out
= 25 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, ICQ = 25 mA, VSWR 30:1 at All Phase Angles)
ψ
No Degradation in Output Power
CLASS A PERFORMANCE
Intermodulation Distortion (2) and Power Gain
(VCC = 28 Vdc, P
out
= 8.0 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, ICQ = 1.2 Adc)
G
PE
IMD
(d3)
IMD
(d5)
—
—
—
23.5
–40
–55
—
—
—
dB
NOTE:
2. To Mil–Std–1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
Figure 1. 30 MHz Linear Test Circuit
C1, C2 — ARCO 469, 190–780 pF
C3, C4 — ARCO 464, 25–280 pF
C5 — 120 pF Dipped Mica
C6, C7 — 100 µF, 15 Vdc
C8 — 680 pF F.T. Allen Bradley
C9 — 1.0 µF 35 V Tantalum
CR1 — 1N4997
L1 — 3 Turns #16 0.25″ ID
L2 — 6 Turns #16 0.5″ ID
L3 — 7 Turns #20 0.38″ ID
L4 — 10 µH Molded Choke Delevan
RFC1 — Ferroxcube VK200/20–4B
RFC2 — 3–Ferroxcube 5653065–3B
RF — Input/Output Connectors UG53 A/µ
R1 — 10 Ω 1/2 Watt 10%
Adjust Bias (Base) for ICQ = 20 mA with No RF Applied
BIAS
INPUT
RF
INPUT
RF OUTPUT
+
–
28 Vdc
RFC1
C6 C7
CR1
L4
L3
C1
C2
R1
DUT
L2
C8
C9
RFC2
C5
C3
C4
L1
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