Motorola MRF422 Datasheet
1
MRF422MOTOROLA RF DEVICE DATA
The RF Line
Designed primarily for applications as a high–power linear amplifier from 2.0
to 30 MHz.
• Specified 28 Volt, 30 MHz Characteristics —
Output Power = 150 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
• Intermodulation Distortion @ 150 W (PEP) —
IMD = –30 dB (Min)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
40 Vdc
Collector–Base Voltage V
CBO
85 Vdc
Emitter–Base Voltage V
EBO
3.0 Vdc
Collector Current — Continuous I
C
20 Adc
Withstanding Current — 10 s — 30 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
290
1.66
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
0.6 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) V
(BR)CEO
35 — — Vdc
Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V
(BR)CES
85 — — Vdc
Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V
(BR)CBO
85 — — Vdc
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
(BR)EBO
3.0 — — Vdc
Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C) I
CES
— — 20 mAdc
(continued)
Order this document
by MRF422/D
SEMICONDUCTOR TECHNICAL DATA
150 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–11, STYLE 1
Motorola, Inc. 1994
REV 6
MRF422
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
h
FE
15 30 120 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 420 — pF
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
out
= 150 W (PEP), I
C(max)
= 6.7 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
G
PE
10 13 — dB
Collector Efficiency
(VCC = 28 Vdc, P
out
= 150 W (PEP), I
C(max)
= 6.7 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
η — 45 — %
Intermodulation Distortion (1)
(VCE = 28 Vdc, P
out
= 150 W (PEP), IC = 6.7 Adc,
ICQ = 150 mAdc, f = 30, 30.001 MHz)
IMD — –33 –30 dB
Output Power
(VCE = 28 Vdc, f = 30 MHz)
P
out
150 — — Watts
(PEP)
NOTE:
1. To Mil–Std–1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
Figure 1. 30 MHz Test Circuit Schematic
C1, C2, C3, C5 — 170–680 pF, ARCO 469
C4 — 80–480 pF, ARCO 466
C6, C8, C11 — ERIE 0.1 µF, 100 V
C7 — MALLORY 500 µF, 15 V Electrolytic
C9 — UNDERWOOD 1000 pF, 350 V
C10 — 10 µF, 50 V Electrolytic
R1 — 10 Ω, 25 Watt Wire Wound
R2 — 10 Ω, 1.0 Watt Carbon
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
L2 — 10 µH Molded Choke
L3 — 12 Turns, #16 Enameled Wire, Close Wound, 1/4″ Dia.
L4 — 5 Turns, 1/8″ Copper Tubing
L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B
+
BIAS
–
R1
CR1
C6 C7
L2 L3
D.U.T.
L1C2
C1
R2
C3 C5
C4L4
L5
28 Vdc
C8 C9 C10 C11
+
–
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