Motorola MRF421 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for application as a high–power linear amplifier from 2.0 to
30 MHz.
• Specified 12.5 Volt, 30 MHz Characteristics —
Output Power = 100 W (PEP)
Minimum Gain = 10 dB
Efficiency = 40%
• Intermodulation Distortion @ 100 W (PEP) —
IMD = –30 dB (Min)
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Order this document
by MRF421/D
100 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Withstand Current — 10 s — 30 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Storage Temperature Range T
CEO
CBO
EBO
C
P
D
stg
20 Vdc
45 Vdc
3.0 Vdc
20 Adc
290
1.66
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
C
θJC
0.6 °C/W
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage (IC = 50 mAdc, IB = 0) V
Collector–Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) V
Collector–Base Breakdown Voltage (IC = 200 mAdc, IE = 0) V
Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V
Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) I
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CES
20 — — Vdc
45 — — Vdc
45 — — Vdc
3.0 — — Vdc
— — 10 mAdc
(continued)
Watts
W/°C
REV 1
Motorola, Inc. 1997
MRF421MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS – continued (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
C
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS
Common–Emitter Amplifier Power Gain
(VCC = 12.5 Vdc, P
ICQ = 150 mAdc, f = 30, 30.001 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, P
ICQ = 150 mA, f = 30, 30.001 MHz)
Intermodulation Distortion (1)
(VCE = 12.5 Vdc, P
ICQ = 150 mA, f = 30, 30.001 MHz)
NOTE:
1. To proposed EIA method of measurement. Reference peak envelope power.
= 100 W, I
out
= 100 W, I
out
= 100 W, IC = 10 Adc,
out
C(max)
C(max)
= 10 Adc,
= 10 Adc,
h
FE
C
ob
G
PE
η 40 — — %
IMD — –33 –30 dB
10 70 — —
— 550 800 pF
10 12 — dB
BIAS
RF
INPUT
R1
+
CR1
–
C1, C2, C4 — 170–780 pF, ARCO 469
C3 — 80–480 pF, ARCO 466
C5, C7, C10 — ERIE 0.1 µF, 100 V
C6 — MALLORY 500 µF @ 15 V Electrolytic
C9 — 100 µF, 15 V Electrolytic
C8 — 1000 pF, 350 V UNDERWOOD
R1 — 10 Ω, 25 Watt Wirewound
C5 C6
C2 L1
C1
C7 C8
L4
R2
L2
C4
D.U.T.
C3
R2 — 10 Ω, 1.0 Watt Carbon
CR1 — 1N4997
L1 — 3 Turns, #16 Wire, 5/16″ I.D., 5/16″ Long
L2 — 12 Turns, #16 Enameled Wire Closewound, 1/4″ I.D.
L3 — 1–3/4 Turns, 1/8″ Tubing, 3/8″ I.D., 3/8″ Long
L4 — 10 µH Molded Choke
L5 — 10 Ferrite Beads — FERROXCUBE #56–590–65/3B
Figure 1. 30 MHz T est Circuit Schematic
L5
C9 C10
L3
+
12.5 Vdc
–
RF
OUTPUT
MRF421
2
MOTOROLA RF DEVICE DATA
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