Motorola MRF393 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF Line

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  

. . . designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.

• Specified 28 Volt, 500 MHz Characteristics —
Output Power = 100 W
Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C)
Efficiency = 55% (Typ)

• Built–In Input Impedance Matching Networks for Broadband Operation

• Push–Pull Configuration Reduces Even Numbered Harmonics

• Gold Metallization System for High Reliability

• 100% Tested for Load Mismatch

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

2

6

5, 8

1, 4

Order this document

by MRF393/D



100 W, 30 to 500 MHz

CONTROLLED “Q”

BROADBAND PUSH–PULL

RF POWER TRANSISTOR

NPN SILICON

7

3

The MRF393 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.

CASE 744A–01, STYLE 1

PUSH–PULL TRANSISTORS

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TC = 25°C (1)

Derate above 25°C
Storage Temperature Range T
Junction Temperature T

CEO
CBO
EBO

C

P

D

stg

J

30 Vdc
60 Vdc

4.0 Vdc
16 Adc

270

1.54

–65 to +150 °C

200 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case R

NOTE:

1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.

θJC

0.65 °C/W

Watts

W/°C

REV 7

 Motorola, Inc. 1997

MRF393MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

= 25°C unless otherwise noted.)

C

OFF CHARACTERISTICS (1)

Collector–Emitter Breakdown V oltage (IC = 50 mAdc, IB = 0) V
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V
Collector Cutoff Current (VCB = 30 Vdc, IE = 0) I

ON CHARACTERISTICS (1)

DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) h

DYNAMIC CHARACTERISTICS (1)

Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) C

FUNCTIONAL TESTS (2) — See Figure 1

Common–Emitter Amplifier Power Gain

(VCC = 28 Vdc, P

Collector Efficiency

(VCC = 28 Vdc, P

Load Mismatch

(VCC = 28 Vdc, P
VSWR = 30:1, all phase angles)

NOTES:

1. Each transistor chip measured separately.

2. Both transistor chips operating in push–pull amplifier.

= 100 W, f = 500 MHz)

out

= 100 W, f = 500 MHz)

out

= 100 W, f = 500 MHz,

out

(BR)CEO
(BR)CES
(BR)EBO

CBO

FE

ob

G

pe

η 50 55 — %

ψ

30 — — Vdc
60 — — Vdc

4.0 — — Vdc
— — 5.0 mAdc

20 — 100 —

40 75 95 pF

7.5 8.5 — dB

No Degradation in Output Power

B1

C1

C2

C1, C2, C7, C8 — 240 pF 100 mil Chip Cap
C3 — 15 pF 100 mil Chip Cap
C4 — 24 pF 100 mil Chip Cap
C5 — 33 pF 100 mil Chip Cap
C6 — 12 pF 100 mil Chip Cap
C9, C13 — 1000 pF 100 mil Chip Cap
C10, C14 — 680 pF Feedthru Cap
C11, C15 — 0.1 µF Ceramic Disc Cap
C12, C16 — 50 µF 50 V

L1

Z1

C4C3

Z2

L2

D.U.T.

C15

L5

C12

L6

C16

C10

C9 C11

L3

Z3 Z5

C5

Z4 Z6

L4

L1

,

L2 — 0.15 µH Molded Choke with Ferrite Bead

L3

,

L4 — 2–1/2 Turns #20 AWG 0.200″ ID

L5

,

L6 — 3–1/2 Turns #18 AWG 0.200″ ID
B1, B2 — Balun 50 Ω Semi Rigid Coax, 86 mil OD, 4″ Long
Z1, Z2 — 850 mil Long x 125 mil W. Microstrip

Z3, Z4 — 200 mil Long x 125 mil W. Microstrip
Z5, Z6 — 800 mil Long x 125 mil W. Microstrip

Board Material — 0.0325″ Teflon–Fiberglass, εr = 2.56,

Board Material — 1 oz. Copper Clad both sides.

C7

C6

C8

C13

B2

C14

+ 28 V

MRF393
2

Figure 1. 500 MHz T est Fixture

MOTOROLA RF DEVICE DATA