Motorola MRF392 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for wideband large–signal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
• Specified 28 Volt, 400 MHz Characteristics —
Output Power = 125 W
Typical Gain = 10 dB
Efficiency = 55% (Typ)
• Built–In Input Impedance Matching Networks for Broadband Operation
• Push–Pull Configuration Reduces Even Numbered Harmonics
• Gold Metallization System for High Reliability
• 100% Tested for Load Mismatch
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
2
6
5, 8
1, 4
Order this document
by MRF392/D
125 W, 30 to 500 MHz
CONTROLLED “Q”
BROADBAND PUSH–PULL
RF POWER TRANSISTOR
NPN SILICON
7
3
The MRF392 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push–pull configuration.
CASE 744A–01, STYLE 1
PUSH–PULL TRANSISTORS
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range T
Junction Temperature T
CEO
CBO
EBO
C
P
D
stg
J
30 Vdc
60 Vdc
4.0 Vdc
16 Adc
270
1.54
–65 to +150 °C
200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push–pull
amplifier.
θJC
0.65 °C/W
Watts
W/°C
REV 8
Motorola, Inc. 1997
MRF392MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted)
C
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown V oltage (IC = 50 mAdc, IB = 0) V
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V
Collector Cutoff Current (VCB = 30 Vdc, IE = 0) I
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) h
DYNAMIC CHARACTERISTICS (1)
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) C
FUNCTIONAL TESTS (2) — See Figure 1
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
Collector Efficiency
(VCC = 28 Vdc, P
Load Mismatch
(VCC = 28 Vdc, P
VSWR = 30:1, all phase angles)
NOTES:
1. Each transistor chip measured separately.
2. Both transistor chips operating in push–pull amplifier.
= 125 W, f = 400 MHz)
out
= 125 W, f = 400 MHz)
out
= 125 W, f = 400 MHz,
out
(BR)CEO
(BR)CES
(BR)EBO
CBO
FE
ob
G
pe
η 50 55 — %
ψ
30 — — Vdc
60 — — Vdc
4.0 — — Vdc
— — 5.0 mAdc
40 60 100 —
— 75 95 pF
8.0 10 — dB
No Degradation in Output Power
B1
C1
Z1 Z3
C4
Z1 Z3
C2
C1, C2 — 240 pF, 100 Mil Chip Cap (ATC) or Equivalent
C3 — 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent
C4, C8 — 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent
C5, C6 — 20 pF, 100 Mil Chip Cap (ATC) or Equivalent
C7 — 18 pF , Mini Unelco or Equivalent
C9, C10 — 270 pF, 100 Mil Chip Cap (ATC) or Equivalent
C11, C12, C16, C17 — 470 pF 100 Mil Chip Cap (ATC) or Equivalent
C13, C18 — 680 pF Feedthru
C14, C19 — 0.1 µF Erie Redcap or Equivalent
C15 — 20 µF, 50 V
L1, L2 — 0.15 µH Molded Choke With Ferrite Bead
L3, L4 — 2–1/2 Turns #20 AWG, 0.200 ID
L5, L6 — 3–1/2 Turns #18 AWG, 0.200 ID
Z2
Z2
L1
L2
D.U.T.
L5
C11
L3
Z4 Z5
Z4 Z5 Z6
L4
C16
B1 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L
B2 — Balun, 50 Ω Semi–Rigid Coaxial Cable 86 Mil OD, 2″ L
Z1 — Microstrip Line 270 Mil L x 125 Mil W
Z2 — Microstrip Line 375 Mil L x 125 Mil W
Z3 — Microstrip Line 280 Mil L x 125 Mil W
Z4 — Microstrip Line 300 Mil L x 125 Mil W
Z5 — Microstrip Line 350 Mil L x 125 Mil W
Z6 — Microstrip Line 365 Mil L x 125 Mil W
Board Material — 0.0625″ Teflon Fiberglass εr = 2.5 ± 0.05 1 oz. Cu.
Board Material — CLAD, Double Sided
Z6
C7C6C5C3
C17
C12
C8
C18
C13
C9
C10
C14 C15
B2
L6
C19
+
+ 28 V
–
MRF392
2
Figure 1. 400 MHz T est Fixture
MOTOROLA RF DEVICE DATA
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