Motorola MRF338 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Designed primarily for wideband large–signal output and driver amplifier
stages in the 400 to 512 MHz frequency range.
• Specified 28 Volt, 470 MHz Characteristics
Output Power = 80 Watts
Minimum Gain = 7.3 dB
Efficiency = 50% (Min)
• Built–In Matching Network for Broadband Operation
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
Order this document
by MRF338/D
80 W, 400 to 512 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 333–04, STYLE 1
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous
Collector Current — Peak
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range T
CEO
CBO
EBO
I
C
P
D
stg
30 Vdc
60 Vdc
4 Vdc
9
12
250
1.43
–65 to +150 °C
Adc
Watts
W/°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted)
C
Symbol Min Typ Max Unit
θJC
0.7 °C/W
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 80 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 8 mAdc, IC = 0)
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
30 — — Vdc
60 — — Vdc
4 — — Vdc
REV 2
Motorola, Inc. 1997
MRF338MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued (T
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 4 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1 MHz)
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
Collector Efficiency
(VCC = 28 Vdc, P
Load Mismatch
(VCC = 28 Vdc, P
VSWR = 30:1, All Phase Angles at Frequency of Test)
= 80 W, f = 470 MHz)
out
= 80 W, f = 470 MHz)
out
= 80 W, f = 470 MHz,
out
= 25°C unless otherwise noted)
C
V
(BR)CBO
I
CBO
h
FE
C
ob
G
PE
η 50 60 — %
ψ
60 — — Vdc
— — 5 mAdc
20 — 80 —
— 95 125 pF
7.3 8.8 — dB
No Degradation in Output Power
L3
C11
R1
RF
INPUT
Bead Ferroxcube #56–590–65/3B
C1, C2, C8, C9 0.8–20 pF, Johanson (JMC 5501)
C3, C4, C6, C7 25 pF, 100 V, Underwood
C5, C10 100 pF, 100 V, Underwood
C11, C13 0.1 µF, Erie Redcap
C12, C14 680 pF, Feedthru
C15 1.0 µF, Tantalum
L1 0.15 µH, Molded Choke
L2 5 Turns #20 AWG, 0.185″ ID, Close Wound
Z1
L1
C1 C2 C3 C4
BEAD
C5
L2
DUT
RFC1
C12
R2
C6 C7 C8 C9
L3 3 Turns #18 AWG, 0.185″ ID, Close Wound
L4 4 Turns #18 AWG, 0.185″ ID, Close Wound
RFC1 Ferroxcube VK200 19/4B
R1, R2 10 Ω, 2.0 Watt Carbon
Z1 0.190″ W x 2.5″ L, Microstrip Lin
Z2 0.190″ W x 0.289″ L, Microstrip Line
Z3 0.190″ W x 0.55″ L, Microstrip Line
Z4 0.190″ W x 0.325″ L, Microstrip Line
Board Glass Teflon, t = 0.062″, εr = 2.56
C14
C13
+
–
L4
C15
C10
Z4Z2 Z3
V
CC
+
28 V
RF
OUTPUT
MRF338
2
Figure 1. 470 MHz Test Circuit
MOTOROLA RF DEVICE DATA
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