Motorola MRF329 Datasheet
1
MRF329MOTOROLA RF DEVICE DATA
The RF Line
. . . designed primarily for wideband large–signal output and driver amplifier
stages in the 100 to 500 MHz frequency range.
• Specified 28 Volt, 400 MHz Characteristics —
Output Power = 100 Watts
Minimum Gain = 7.0 dB
Efficiency = 50% (Min)
• Built–In Matching Network for Broadband Operation Using Double Match
Technique
• 100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
• Gold Metallization System for High Reliability
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
30 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous
Collector Current — Peak
I
C
9.0
12
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
270
1.54
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) R
θJC
0.65 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, IB = 0)
V
(BR)CEO
30 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
V
(BR)CES
60 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 8.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
NOTES: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Order this document
by MRF329/D
SEMICONDUCTOR TECHNICAL DATA
100 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 333–04, STYLE 1
Motorola, Inc. 1994
REV 6
MRF329
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (continued)
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IE = 0)
V
(BR)CBO
60 — — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
— — 5.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
h
FE
20 — 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 95 125 pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
out
= 100 W, f = 400 MHz)
G
PE
7.0 9.7 — dB
Collector Efficiency
(VCC = 28 Vdc, P
out
= 100 W, f = 400 MHz)
η 50 60 — %
Load Mismatch
(VCC = 28 Vdc, P
out
= 100 W, f = 400 MHz,
VSWR = 3:1 all angles)
ψ
No Degradation in Output Power
Figure 1. 400 MHz Test Circuit
RF
INPUT
RF
OUTPUT
DUT
Z1
C1 C2 C3 C4 C5 C6 C7 C8 C9 C11
L1
C12 C13
C14
C10
28 Vdc
L2
Z2
L3
–
+
C1, C2, C7, C9 — 1.0–20 pF Johanson (JMC 5501)
C3, C4 — 36 pF 100 mil Chip Cap (ATC)
C5, C6 — 50 pF 100 mil Chip Cap (ATC)
C8 — 30 pF 100 mil Chip Cap (ATC)
C10 — 2.0–150 pF 100 mil Chip Caps in Parallel (A TC)
C11 — 1.0–10 pF Johanson (JMC 5201)
C12, C13 — 1000 pF UNELCO Feedthru
C14 — 0.1 µF Erie Redcap
L1 — 0.15 µH Molded Choke with Ferrite Bead
L1 — (Ferroxcube #56–590–65/4B) on Ground End
L2 — 4 Turns #18 AWG, 1/4″ ID
L3 — Ferroxcube VK200–19/4B
Z1 — Microstrip Line 2300 mils L x 210 mils W
Z2 — Microstrip Line 2300 mils L x 280 mils W
Board — Glass Teflon, t = 0.062″, εr = 2.56
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