Motorola MRF327 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
100 to 500 MHz frequency range.
• Guaranteed Performance @ 400 MHz, 28 Vdc
Output Power = 80 Watts over 225 to
Minimum Gain = 7.3 dB @ 400 MHz
• Built–In Matching Network for Broadband Operation Using Double Match
Technique
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
to
• Characterized for 100
500 MHz
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous
Collector Current — Peak
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range T
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
400 MHz Band
CEO
CBO
EBO
I
C
P
D
stg
33 Vdc
60 Vdc
4.0 Vdc
9.0
12
250
1.43
–65 to +150 °C
Adc
Watts
W/°C
θJC
Order this document
by MRF327/D
80 W, 100 to 500 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
0.7 °C/W
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
C
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 80 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage
(IE = 8.0 mAdc, IC = 0)
Collector–Base Breakdown Voltage
(IC = 80 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
V
(BR)CBO
I
CBO
33 — — Vdc
60 — — Vdc
4.0 — — Vdc
60 — — Vdc
— — 5.0 mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 Adc, VCE = 5.0 Vdc) h
FE
20 — 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
NOTE: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 1
C
ob
— 95 125 pF
Motorola, Inc. 1997
MRF327MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS – continued (T
Characteristic Symbol Min Typ Max Unit
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
Collector Efficiency
(VCC = 28 Vdc, P
Load Mismatch
(VCC = 28 Vdc, P
VSWR = 30:1 All Phase Angles)
= 80 W, f = 400 MHz)
out
= 80 W, f = 400 MHz)
out
= 80 W, f = 400 MHz,
out
= 25°C unless otherwise noted.)
C
G
PE
η 50 60 — %
ψ
R2
7.3 9.0 — dB
No Degradation in Output Power
C12
L4
L5
L1
RF
INPUT
Z1
C1
C1, C2, C7, C8, C9 — 1.0–20 pF Piston Trimmer (Johanson JMC 5501)
C3, C4 — 36 pF ATC 100 mil Chip Capacitor
C5, C6 — 43 pF ATC 100 mil Chip Capacitor
C10 — 100 pF UNELCO
C11, C15 — 0.1 µF Erie Redcap
C12, C13 — 680 pF Feedthru
C14 — 1.0 µF 50 V Tantalum
L1 — 4 Turns #22 AWG Enameled, 3/16″ ID Closewound with Ferroxcube
L1 — Bead (#56–590–65/4B) on Ground End of Coil
L2 — Ferroxcube VK200–19/4B Ferrite Choke
L3 — 7 Turns #18 AWG, 11/16″ Long, Wound on a 100 kΩ 2.0 Watt Resistor
C2 C3 C4
DUT
C5 C6
L3
L2
R1
C7 C8 C9
L4 — 6 Turns #20 AWG Enameled, 3/16″ ID Closewound
L5 — 4 Turns #22 AWG Enameled, 1/8″ ID Closewound
Z1 — Microstrip 0.2″ W x 1.5″ L
Z2 — Microstrip 0.17″ W x 1.16″ L
Z3 — Microstrip 0.17″ W x 0.63″ L
R1, R2 — 10 Ω 2.0 Watt
Board — Glass Teflon εr = 2.56, t = 0.062″
Input/Output Connectors Type N
DUT Socket Lead Frame Etched from 80–mil–Thick Copper
+
C13
Z2 Z3
C14 C15
–
C11
C10
+
–
V
CC
28 Vdc
OUTPUT
RF
MRF327
2
Figure 1. 400 MHz Test Circuit
MOTOROLA RF DEVICE DATA
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