Motorola MRF325 Datasheet
2–1
MRF325MOTOROLA RF DEVICE DATA
The RF Line
. . . designed primarily for wideband large–signal output and driver amplifier
stages in 100 to 500 MHz frequency range.
• Specified 28 Volt, 400 MHz Characteristics —
Output Power = 30 Watts
Minimum Gain = 8.5 dB
Efficiency = 54% (Min)
• Built–In Matching Network for Broadband Operation Using Internal Match-
ing Techniques
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization for High Reliability Applications
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
33 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous
Collector Current — Peak
I
C
3.4
4.5
Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
82
0.47
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.13 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 30 mAdc, IB = 0)
V
(BR)CEO
33 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 30 mAdc, VBE = 0)
V
(BR)CES
60 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 3.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector–Base Breakdown Voltage
(IC = 30 mAdc, IE = 0)
V
(BR)CBO
60 — — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
— — 3.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.5 Adc, VCE = 5.0 Vdc)
h
FE
20 — 80 —
NOTE: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Order this document
by MRF325/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
Motorola, Inc. 1994
MRF325
2–2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 30 40 pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
out
= 30 W, f = 400 MHz)
G
PE
8.5 9.5 — dB
Collector Efficiency
(VCC = 28 Vdc, P
out
= 30 W, f = 400 MHz)
η 50 60 — %
Load Mismatch
(VCC = 28 Vdc, P
out
= 30 W, f = 400 MHz,
VSWR = 30:1 all angles)
ψ
No Degradation in Output Power
Figure 1. 400 MHz Test Circuit
C1, C9 — 1.0–10 pF Johanson Capacitor (JMC 5201)
C2, C3, C6, C7 — 1.0–20 pF Johanson Capacitor (JMC 5501)
C4, C5 — 36 pF ATC 100–mil Chip Capacitor
C8 — 100 pF UNELCO
C10, C13 — 1.0 µF 50 V Tantalum
C11, C14 — 680 pF Feedthru
C12 — 0.1 µF Erie Redcap
L1 — 8 Turns #26 AWG Enameled, 1/16″ ID Closewound
L1 — with Ferroxcube Bead (#56–590–65/4B) on Ground End
L2 — 14 Turns, #22 AWG Enameled, Closewound on a 470 Ω,
L2 — 2.0 Watt Resistor with Ferroxcube Bead (#56–590–65/4B)
L2 — on Cold End of L2
L3 — Ferroxcube VK200–19/4B Ferrite Choke
Z1 — Microstrip 0.19″ W x 0.88″ L
Z2 — Microstrip 0.28″ W x 1.0″ L
Z3 — Microstrip 0.31″ W x 1.25″ L
Board — Glass Teflon εr = 2.56, t = 0.062″
Input/Output Connectors — Type N
DUT Socket Lead Frame Etched from 80–mil–Thick Copper
RF
INPUT
RF
OUTPUT
Z1 Z2
Z3
C1
C2
C3 C4 C5
DUT
L1
+
C10
–
L2
C11
C12 C13
+
C14
L3
+
–
V
CC
28 Vdc
C6 C7 C9
C8
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