Motorola MRF321 Datasheet
1
MRF321MOTOROLA RF DEVICE DATA
The RF Line
. . . designed primarily for wideband large–signal driver and predriver amplifier
stages in 200–500 MHz frequency range.
• Guaranteed Performance at 400 MHz, 28 Vdc
Output Power = 10 Watts
Power Gain = 12 dB Min
Efficiency = 50% Min
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability
• Computer–Controlled Wirebonding Gives Consistent Input Impedance
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
33 Vdc
Collector–Base Voltage V
CBO
60 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous
Collector Current — Peak
I
C
1.1
1.5
Adc
Total Device Dissipation @ TA = 25°C (1)
Derate above 25°C
P
D
27
160
Watts
mW/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
6.4 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
V
(BR)CEO
33 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V
(BR)CES
60 — — Vdc
Collector–Base Breakdown Voltage
(IC = 20 mAdc, IE = 0)
V
(BR)CBO
60 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 2.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
— — 1.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 500 mA, VCE = 5.0 Vdc)
h
FE
20 — 80 —
NOTE: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
Order this document
by MRF321/D
SEMICONDUCTOR TECHNICAL DATA
10 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 244–04, STYLE 1
Motorola, Inc. 1994
MRF321
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 10 12 pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
out
= 10 W, f = 400 MHz)
G
PE
12 13 — dB
Collector Efficiency
(VCC = 28 Vdc, P
out
= 10 W, f = 400 MHz)
η 50 60 — %
Load Mismatch
(VCC = 28 Vdc, P
out
= 10 W, f = 400 MHz,
VSWR = 30:1 all phase angles)
ψ
No Degradation in Output Power
Figure 1. 400 MHz Test Circuit Schematic
C1, C2, C3 — 1.0–20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C10 — 0.1 µF Erie Redcap
C7 — 0.5–10 pF Johanson Trimmer (JMC 5201)
C8 — 0.018 µF Vitramon Chip Capacitor
C9 — 200 pF UNELCO Capacitor
C11, C12 — 680 pF Feedthru
C13 — 1.0 µF, 50 Volt Tantalum Capacitor
D1 — 1N4001
L1 — 0.33 µH Molded Choke with Ferroxcube Bead
L1 — (Ferroxcube 56–590–65/4B) on Ground End of Coil
L2 — 4 Turns #20 Enamel, 1/8″ ID
L3 — 6 Turns #20 Enamel, 1/4″ ID
L4 — Ferroxcube VK200–19/4B
R1 — 5.1 Ω, 1/4 Watt
R2 — 120 Ω, 1.0 Watt
R3 — 20 Ω, 1/2 Watt
R4 — 47 Ω, 1/2 Watt
Z1 — Microstrip 0.1″ W x 1.35″ L
Z2 — Microstrip 0.1″ W x 0.55″ L
Z3 — Microstrip 0.1″ W x 0.8″ L
Z4 — Microstrip 0.1″ W x 1.75″ L
Board — Glass Teflon, εR = 2.56, t = 0.062″
Input/Output Connectors — Type N
R2 R3
D1 R4
C9
L1
L3
C10
C11
L4
C12
C13
+
–
+
–
28 V
RF
OUTPUT
RF
INPUT
Z1 Z2
Z3 Z4
C8
C1 C2
C3 C4
C5
R1
C6 C7
DUT
L2
+
–
5 V
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