Motorola MRF317 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in
30–200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 100 W
Minimum Gain = 9.0 dB
• Built–In Matching Network for Broadband Operation
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability
• High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W
Peak AM Amplifier Service
• Guaranteed Performance in Broadband Test Fixture
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous
Collector Current — Peak (10 seconds)
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range T
CEO
CBO
EBO
I
C
P
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
ELECTRICAL CHARACTERISTICS (T
Characteristic Symbol Min Typ Max Unit
= 25°C unless otherwise noted.)
C
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 100 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 100 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
35 Vdc
65 Vdc
4.0 Vdc
12
18
270
1.54
–65 to +150 °C
V
V
V
V
Adc
Watts
W/°C
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
I
CBO
Order this document
by MRF317/D
100 W, 30–200 MHz
CONTROLLED Q
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
θJC
35 — — Vdc
65 — — Vdc
65 — — Vdc
4.0 — — Vdc
— — 5.0 mAdc
0.65 °C/W
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 5.0 Vdc)
NOTE: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7
Motorola, Inc. 1997
h
FE
10 25 80 —
MRF317MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued (T
Characteristic Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (Figure 2)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
Collector Efficiency
(VCC = 28 Vdc, P
Load Mismatch
(VCC = 28 Vdc, P
VSWR = 30:1 all phase angles)
= 100 W, f = 150 MHz, IC (Max) = 6.5 Adc)
out
= 100 W, f = 150 MHz, IC (Max) = 6.5 Adc)
out
= 100 W CW, f = 150 MHz,
out
= 25°C unless otherwise noted.)
C
C
ob
G
PE
η 55 60 — %
ψ
— 150 175 pF
9.0 10 — dB
No Degradation in Output Power
MRF317
2
MOTOROLA RF DEVICE DATA
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