Motorola MRF316 Datasheet
SEMICONDUCTOR TECHNICAL DATA
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
30–200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 80 Watts
Minimum Gain = 10 dB
• Built–In Matching Network for Broadband Operation
• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous
Collector Current — Peak
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range T
CEO
CBO
EBO
I
C
P
D
stg
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
35 Vdc
65 Vdc
4.0 Vdc
9.0
13.5
220
1.26
–65 to +150 °C
Adc
Watts
W/°C
θJC
Order this document
by MRF316/D
80 W, 3.0–200 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
0.8 °C/W
ELECTRICAL CHARACTERISTICS (T
Characteristic
= 25°C unless otherwise noted.)
C
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 50 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
35 — — Vdc
65 — — Vdc
65 — — Vdc
4.0 — — Vdc
— — 5.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 4.0 Adc, VCE = 5.0 Vdc)
h
FE
10 — 80 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
NOTE: (continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
C
ob
— 100 130 pF
REV 7
Motorola, Inc. 1997
MRF316MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS — continued (T
Characteristic Symbol Min Typ Max Unit
NARROW BAND FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
Collector Efficiency
(VCC = 28 Vdc, P
Load Mismatch
(VCC = 28 Vdc, P
VSWR = 30:1 all phase angles)
= 80 W, f = 150 MHz)
out
= 80 W, f = 150 MHz)
out
= 80 W CW, f = 150 MHz,
out
= 25°C unless otherwise noted.)
C
G
PE
η 55 — — %
ψ
R2
R3
RFC6
RFC5
10 13 — dB
No Degradation in Output Power
+ 28 Vdc
C13
RF
INPUT
C1
L1
C4
C3
C2
C1 — 22 pF 100 mil ATC
C2, C3 — 24 pF 100 mil ATC
C4, C11 — 0.8–20 pF JMC #5501 Johanson
C5 — 200 pF 100 mil ATC
C6 — 240 pF 100 mil ATC
C7 — Dipped Mica 1000 pF
C8 — 0.1 µF Erie Red Cap
C9, C10, C12 — 30 pF 100 mil ATC
C13 — 1.0 µF Tantalum
RFC1
RFC2
RFC3
C5
Figure 1. 150 MHz Test Amplifier
C7
C6
DUT
R1
L2
RFC4
C9
C8
L1 — 0.8″, #20 Wire
L2 — 1.0″, #20 Wire
RFC1, RFC4 — 0.15 µH Molded Coil
RFC2, RFC3 — Ferroxcube Bead 56–590–65–3B
RFC5 — 2.5″, #20 Wire, 1.5 Turns
RFC6 — Ferroxcube VK200–19/4B
R1 — 10 Ω, 1/2 W
R2, R3 — 10 Ω, 1.0 W
C10
C11
C12
RF
OUTPUT
MRF316
2
MOTOROLA RF DEVICE DATA
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