Motorola MRF314 Datasheet
1
MRF314MOTOROLA RF DEVICE DATA
The RF Line
. . . designed primarily for wideband large–signal driver and output amplifier
stages in the 30–200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 30 Watts
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
• Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
35 Vdc
Collector–Base Voltage V
CBO
65 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current — Continuous I
C
3.4 Adc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
P
D
82
0.47
Watts
W/°C
Storage Temperature Range T
stg
–65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case R
θJC
2.13 °C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 30 mAdc, IB = 0)
V
(BR)CEO
35 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 30 mAdc, VBE = 0)
V
(BR)CES
65 — — Vdc
Collector–Base Breakdown Voltage
(IC = 30 mAdc, IE = 0)
V
(BR)CBO
65 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 3.0 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
I
CBO
— — 3.0 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.5 Adc, VCE = 5.0 Vdc)
h
FE
20 — 80 —
NOTE: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
Order this document
by MRF314/D
SEMICONDUCTOR TECHNICAL DATA
30 W, 30–200 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211–07, STYLE 1
Motorola, Inc. 1994
MRF314
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS — continued (T
C
= 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
C
ob
— 30 40 pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, P
out
= 30 W, f = 150 MHz)
G
PE
10 13.5 — dB
Collector Efficiency
(VCC = 28 Vdc, P
out
= 30 W, f = 150 MHz)
η 50 — — %
Load Mismatch
(VCC = 28 Vdc, P
out
= 30 W, f = 150 MHz,
VSWR = 30:1 all phase angles)
ψ
No Degradation in Power Output
Figure 1. 150 MHz Test Circuit
R2
R1
RFC3
L1
C10
C9C8
RFC2
C2 C3 RFC1 C4 C5
C6
RF OUTPUTZ2
C1
Z1
DC + 28 Vdc
C7
DUT
RF INPUT
C1, C7 — 18 pF, 100 mil ATC
C2 — 68 pF, 100 mil ATC
C3, C6 — Johanson #JMC 5501
C4 — 270 pF, 100 mil ATC
C5 — 240 pF, 100 mil ATC
C8, C9 — 100 pF Underwood
C10 — 1.0 µF Tantalum
L1 — 2 Turns, 2.5″ #20 Wire, ID = 0.275″
R1, R2 — 10 Ω, 1.0 W
RFC1 — 15 µH Molded Coil
RFC2 — 2 Turns, 2.5″ #20 Wire, ID = 0.2″
RFC3 — Ferroxcube VK200–19/4B
Z1 — Microstrip, 0.168″ W x 1.6″ L
Z2 — Microstrip, 0.168″ W x 1.2″ L
Board — Glass Teflon εr = 2.55
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