Motorola MRF3095, MRF3094 Datasheet


SEMICONDUCTOR TECHNICAL DATA
The RF Line
Order this document
by MRF3094/D
   
Designed for Class A, common emitter linear power amplifiers.
Specified 20 Volt, 1.6 GHz Characteristics Output Power — 0.5, 0.8, 1.6 Watts Gain — 9.0–12 dB
Low Parasitic Microwave Stripline Package
Gold Metallization Diffused Emitter Ballast Resistors
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.


9.0–12 dB
1.55–1.65 GHz
0.5–1.6 WATTS
MICROWAVE LINEAR
POWER TRANSISTORS
CASE 328A–03, STYLE 2
MAXIMUM RATINGS
Rating Symbol Limit Unit
Collector Base Voltage V Emitter Base Voltage V Collector Emitter Voltage V Collector Current MRF3094, 3095 I Operating Junction Temperature T Storage Temperature T
THERMAL CHARACTERISTICS
Characteristic Symbol
Thermal Resistance, Junction to Case R
CES EBO CEO
C
J
stg
θJC
50 Vdc
3.5 Vdc 22 Vdc
0.4 Adc
200 °C
–65 to +150 °C
Max
MRF3094 MRF3095
40 35 °C/W
Unit
REV 8
Motorola, Inc. 1997
MRF3094 MRF3095MOTOROLA RF DEVICE DATA
1
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage
(IC = 10 mA) MRF3094, MRF3095
Emitter Base Breakdown Voltage
(IE = 0.25 mA) MRF3094, MRF3095
Collector Base Breakdown Voltage
(IC = 1.0 mA) MRF3094, MRF3095
Collector–Emitter Breakdown Voltage
(IC = 10 mA) MRF3094, MRF3095
Collector Cutoff Current
(VCB = 28 V) MRF3094, MRF3095
ON CHARACTERISTICS
DC Current Gain
(VCE = 5.0 V, IC = 100 mA) MRF3094, MRF3095
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 V, f = 1.0 MHz) MRF3094, MRF3095
Functional Tests
(VCE = 20 V, IC = 120 mA, Po = 0.5 W, f = 1.6 GHz) MRF3094 (VCE = 20 V, IC = 120 mA, Po = 0.8 W, f = 1.6 GHz) MRF3095
Output Load Mismatch
(VCE = 20 V, IC = 120 mA, Po = 0.5 W, f = 1.6 GHz, Load VSWR = :1) MRF3094 (VCE = 20 V, IC = 120 mA, Po = 0.8 W, f = 1.6 GHz, Load VSWR = :1) MRF3095
Gain Linearity
(VCE = 20 V, IC = 120 mA, f = 1.6 GHz, Po1 = 0.5 W, Po2 = 0.5 mW) MRF3094 (VCE = 20 V, IC = 120 mA, f = 1.6 GHz, Po1 = 0.8 W, Po2 = 0.8 mW) MRF3095
V
(BR)CES
V
(BR)EBO
V
(BR)CBO
V
(BR)CEO
I
CBO
h
fe
C
ob
G
PE
ψ
L
G
50 Vdc
3.5 Vdc
45 Vdc
22 Vdc
0.25
20 35 120
3.5
10.5
9.0
11.5 10
No degradation in output power
— —
–0.2 to +1.0
–0.2 to +1.0
mAdc
pF
dB
dB
MRF3094 MRF3095 2
MOTOROLA RF DEVICE DATA
Loading...
+ 4 hidden pages