Motorola MRF3010 Datasheet

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SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

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N–Channel Enhancement–Mode Lateral
MOSFET

Designed for IMARSA T satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,

CW amplifier applications.

• Guaranteed Performance @ 1.6 GHz, 28 Volts
Output Power = 10 Watts
Minimum Gain = 9.5 dB @ 10 Watts
Minimum Efficiency = 45% @ 10 Watts

• High Gain, Rugged Device

• Bottom Side Source Eliminates DC Isolators,

Reducing Common Mode Inductances

• Broadband Performance of This Device Makes It

Ideal for Applications from 800 to 1700 MHz,
Common–Source Class AB Operation.

• Typical Performance at Class A Operation:
P

= 2 Watts, VDD = 28 Volts, IDQ = 1 A,

out

Gain = 12.5 dB, IMD = –32 dB

• Characterized with Small–Signal S–Parameters from 500 to 2500 MHz

• Capable of Handling 30:1 VSWR, @ 28 Vdc

• Circuit Board Available Upon Request by Contacting RF Tactical Marketing

in Phoenix, AZ

G

D

S

Order this document

by MRF3010/D

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10 W, 1.6 GHz, 28 V

LATERAL N–CHANNEL

BROADBAND

RF POWER MOSFET

CASE 360B–01, STYLE 1

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain–Source Voltage V
Gate–Source Voltage V
Storage Temperature Range T
Operating Junction Temperature T

ELECTRICAL CHARACTERISTICS (T

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0, ID = 1 µA)

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0)

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

= 25°C unless otherwise noted)

C

V

(BR)DSS

I

DSS

I

GSS

DSS

GS
stg

J

65 – – Vdc

– – 10 µAdc

– – 1 µAdc

65 Vdc

±20 Vdc

– 65 to +150 °C

200 °C

REV 1

 Motorola, Inc. 1998

MRF3010MOTOROLA RF DEVICE DATA

1

ELECTRICAL CHARACTERISTICS – continued (T

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 50 mA)

Drain–Source On–Voltage

(VGS = 10 V, ID = 1 A)

Forward Transconductance

(VDS = 10 V, ID = 1 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 28 V, VGS = 0, f = 1 MHz)

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1 MHz)

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1 MHz)

FUNCTIONAL CHARACTERISTICS

Common Source Power Gain

(VDD = 28 Vdc, P

Drain Efficiency

(VDD = 28 Vdc, P

Output Mismatch Stress

(VDS = 28 Vdc, P
Load VSWR 30:1 at All Phase Angles)

Series Equivalent Input Impedance

(VDD = 28 Vdc, P

Series Equivalent Output Impedance

(VDD = 28 Vdc, P

= 10 W, IDQ = 50 mA, f = 1.6 GHz)

out

= 10 W, IDQ = 50 mA, f = 1.6 GHz)

out

= 10 W, IDQ = 50 mA, f = 1600 MHz,

out

= 10 W, IDQ = 50 mA, f = 1.6 GHz)

out

= 10 W, IDQ = 50 mA, f = 1.6 GHz)

out

= 25°C unless otherwise noted)

C

V

GS(th)

V

DS(on)

g

fs

C

iss

C

oss

C

rss

G

ps

η 45 50 – %

Ψ No Degradation in Output Power

Z

in

Z

ol

2 2.5 5 Vdc

– 1.5 – Vdc

0.35 0.55 – mhos

– 15 – pF

– 9 – pF

– 0.7 – pF

9.5 10.5 – dB

– 3.1+j7.18 – Ω

– 6.16–j4.75 – Ω

V

GG

INPUT

RF

INPUT

C1, C6, C10, C12 24 pF, “A” Chip Capacitor, ATC
C2, C3, C7, C8 0.8–8.0 pF, Variable Capacitor, Johansen Gigatrim
C4, C11 240 pF, “A” Chip Capacitor, ATC
C5, C9 0.1 µF, Ceramic Capacitor
C13 50 µF, 50 V, Electrolytic Capacitor
L1 Ferroxcube VK200–19/4B
L2 2 Turns, 0.175′′ ID, 20 A WG, Close Wound
L3 10 Turns, 20 AWG, Close W ound
R1 1 kΩ, 1/4 W Resistor

L1

R1 C4 C5 C6

Z1

C1

C2

R2

R4

Z2 Z3

C3

Figure 1. 1.6 GHz T est Circuit Schematic

DUT

Z4

C9 C10 C11

L2

Z5

C7 C8

R2 220 Ω , 1/4 W Resistor
R3 10 kΩ, 2 W Resistor
R4 10 kΩ, 1/8 W Resistor
Z1 0.081′′ x 0.42′′ Microstrip
Z2 0.081′′ x 1.24′′Microstrip
Z3 0.32′′ x 0.48′′Microstrip
Z4 0.35′′ x 0.5′′Microstrip
Z5 0.15′′ x 0.44′′Microstrip
Z6 0.081′′ x 1.165′′Microstrip

Z6

L3

R3

C12

+

C13

V

DD

INPUT

RF
OUTPUT

MRF3010
2

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

14
12
10

, OUTPUT POWER (WATTS)

out

P

VDS = 28 Vdc
IDQ = 50 mA

8
6
4
2
0

0.20 0.4 0.6 0.8 1.5

0.30.1 0.5 0.7 0.9 1.1 1.31.0 1.2 1.4
Pin, INPUT POWER (Watts)

f = 1.6 GHz

f = 1.64 GHz

Figure 2. Output Power versus Input Power

100

10

14

VDS = 28 Vdc

12

IDQ = 50 mA
f = 1.6 GHz

10

8

6

4

, OUTPUT POWER (WATTS)

out

P

2

0

1614 18 20 2721 2322 24 25

1513 17 19 26 28

VDS, DRAIN VOLTAGE (V)

Figure 3. Output Power versus Drain Voltage

C

iss

C

oss

Pin = 1 W

0.75 W

0.5 W

0.25 W

C, CAPACITANCE (pF)

1.0

0.1
5010152530

V

, DRAIN SOURCE VOLTAGE (V)

DS

20

Figure 4. Capacitance versus Drain V oltage

C

rss

MRF3010MOTOROLA RF DEVICE DATA

3