Motorola MPSW92 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
–300 Vdc
Collector–Base Voltage V
CBO
–300 Vdc
Emitter–Base Voltage V
EBO
–5.0 Vdc
Collector Current — Continuous I
C
–500 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction to Case
R
q
JC
50 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(IC = –1.0 mAdc, IB = 0)
V
(BR)CEO
–300 — Vdc
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V
(BR)CBO
–300 — Vdc
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
V
(BR)EBO
–5.0 — Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
I
CBO
— –0.25 µAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
I
EBO
— –0.1 µAdc
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPSW92/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
1
2
3
Motorola Preferred Device
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPSW92
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
h
FE
25
40
25
—
—
—
—
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
V
CE(sat)
— –0.5 Vdc
Base–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
V
BE(sat)
— –0.9 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
f
T
50 — MHz
Collector–Base Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
C
cb
— 6.0 pF
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. DC Current Gain Figure 2. Collector Saturation Region
–50
IC, COLLECTOR CURRENT (mA)
200
100
50
30
20
IB, BASE CURRENT (mA)
–0.5
–0.4
–0.3
–0.2
0
TJ = 125°C
h
–20 –0.5 –5.0–0.1
–0.2
–1.0 –2.0
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
25°C
–1.0 –2.0 –10–5.0
70
–10 –20 –30
–0.1
V
CE
, DC CURRENT GAIN
FE
–3.0 –7.0 –30 –70 –100
–55°C
VCE = –10 V
–0.7
–0.6
TJ = 25°C
IC = –30 mA
IC = –10 mA
IC = –20 mA
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