Motorola MPSH24 Datasheet
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
CEO
30 Vdc
Collector–Base Voltage V
CBO
40 Vdc
Emitter–Base Voltage V
EBO
4.0 Vdc
Collector Current – Continuous I
C
50 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Operating and Storage Junction
Temperature Range
TJ, T
stg
–55 to +135 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
R
q
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V
(BR)CEO
30 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V
(BR)CBO
40 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V
(BR)EBO
4.0 — — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
I
CBO
— — 50 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 8.0 mAdc, VCE = 10 Vdc)
h
FE
30 — — —
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz)
f
T
400 620 — MHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
C
cb
— 0.25 0.36 pF
Conversion Gain
(213 MHz to 45 MHz)
(IC = 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms)
(60 MHz to 45 MHz)
(IC = 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms)
G
C
19
24
24
29
—
—
dB
Order this document
by MPSH24/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER
MPSH24
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. Conversion Gain versus
Collector Current
Figure 2. Conversion Gain versus
Injection Level
Figure 3. Input Admittance Figure 4. Reverse Transfer Admittance
Figure 5. Forward Transfer Admittance Figure 6. Output Admittance
120
IC, COLLECTOR CURRENT (mAdc)
40
0
20
30
10
Vi, OSCILLATOR INJECTION (mV)
100 4000
30
10
0
0
IC, COLLECTOR CURRENT (mAdc)
50
40
30
20
10
0
IC, COLLECTOR CURRENT (mAdc)
4.00
0.1
0.08
0.06
0.04
0.02
0
2.020
2.0 6.00
IC, COLLECTOR CURRENT (mAdc)
200
120
80
40
0
IC, COLLECTOR CURRENT (mAdc)
4.0 160
0.8
0.6
0.2
0
104.0
G
PC
, CONVERSION GAIN (dB)y , INPUT ADMITTANCE (mmhos)
y
re
, REVERSE TRANSFER ADMITTANCE (mmhos)
6.02.0 4.0 8.0 10 14 16 200 300
20
40
2.0 4.0 106.0 10 12 20
, FORWARD TRANSFER ADMITTANCE (mmhos)y
fe
8.0 2010
160
2.0 6.0 8.0 201812 14
0.4
y
oe
, OUTPUT ADMITTANCE (mmhos)
8.06.0 14 16 18
f = 45 MHz
gre < –0.01 mmho
–b
re
f = 45 MHz
g
oe
f = 45 MHz
8.0 12 14 16 18
ie
12 14 16 18
b
oe
b
ie
b
ie
g
ie
g
ie
b
fe
g
fe
213 MHz
60 MHz
f
sig
= 60 MHz, f
osc
= 10 MHz
f
sig
= 213 MHz, f
osc
= 275 MHz
Osc Inj = 150 mVrms
f
sig
= 60 MHz, f
osc
= 104 MHz
f
sig
= 213 MHz, f
osc
= 275 MHz
IC = 8.0 mAdc
G
PC
, CONVERSION GAIN (dB)
COMMON–EMITTER y PARAMETERS
(VCE = 15 Vdc, TA = 25°C)
CONVERSION GAIN CHARACTERISTICS
(TEST CIRCUIT FIGURE 7)
(VCC = 20 Vdc, RS = RL = 50 Ohms, fif = 44 MHz, B.W. = 6.0 MHz)
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